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NTMFS4845NT1G
+Lista de MateriaisMOSFET N-CH 30V 13.7A/115A 5DFN
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Fabricanteonsemi
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Peça do Fabricante #NTMFS4845NT1G
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Especificações
| Atributo | Valor |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta), 115A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 11.5 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 12 V |
| Power Dissipation (Max) | 890mW (Ta), 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NTMFS4845 |
Visão Geral
Description
Key specifications include a maximum drain-source voltage (V_DS) of 40V, a continuous drain current (I_D) of 50A, and a low gate threshold voltage (V_GS(th)) which facilitates efficient switching at lower voltages. The device is housed in a compact surface-mount package (DPAK), which aids in thermal management and space-saving designs.
With fast switching speeds and high reliability, the NTMFS4845NT1G is ideal for applications requiring efficient power handling and minimal energy loss. It is commonly used in consumer electronics, automotive, and industrial applications.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V.
2. Continuous Drain Current: Capable of handling up to 50A, making it suitable for high-power applications.
3. Low R_DS(on): Offers a low on-resistance of approximately 0.0037Ω at V_GS = 10V, which enhances efficiency by reducing conduction losses.
4. Fast Switching: Designed for high-speed switching applications, improving performance in DC-DC converters and motor drives.
5. TO-220 Package: Housed in a TO-220 package for effective thermal management and easy mounting.
6. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) of 1V to 2.5V, allowing for better drive control.
7. Thermal Resistance: Low thermal resistance ensures efficient heat dissipation.
These attributes make the NTMFS4845NT1G ideal for various applications, including automotive, industrial, and consumer electronics.
Pinout
### Pin Functions:
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - Connects to the load; current flows out through this pin when the MOSFET is on.
3. Source (S) - Connects to the ground or power supply; current flows into this pin when the MOSFET is on.
4. Drain (D) - Another drain pin for better thermal performance and current handling.
5. Source (S) - Another source pin for enhanced performance.
The dual drain and source configuration increases flexibility in PCB layout and thermal management. The device features low on-resistance and fast switching times, making it suitable for high-efficiency applications.