NTMFS4925NT1G

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NTMFS4925NT1G

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MOSFET N-CH 30V 9.7A/48A 5DFN

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Especificações

Atributo Valor
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 9.7A (Ta), 48A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 5.6mOhm @ 30A, 10V
Vgs(th)(Max) @ Id 2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 21.5 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1264 pF @ 15 V
Power Dissipation (Max) 920mW (Ta), 23.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)

Visão Geral

Description

NTMFS4925NT1G is a specific part number for a semiconductor device, often used in electronic circuits. It typically refers to a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is a fundamental component in electronic devices for switching and amplifying electronic signals. These transistors are essential in various applications due to their efficiency and reliability.
Key specifications of the NTMFS4925NT1G might include parameters such as voltage rating, current handling capabilities, on-resistance, and packaging type. This particular MOSFET might be selected for its low on-resistance, which helps in reducing power losses, and its ability to handle significant amounts of current, making it suitable for power management applications.
These components are commonly used in power management systems, motor controllers, and other applications where efficient power handling is critical. Understanding the datasheet and manufacturer’s specifications is crucial when integrating the NTMFS4925NT1G into a circuit to ensure it meets the desired electrical and thermal requirements.

Equivalent

Equivalent products to the NTMFS4925NT1G, a MOSFET designed for power management, might include similar N-channel MOSFETs like the IRF520, IRF540, or FDN5630. These alternatives should be evaluated based on parameters like voltage rating, current handling, on-resistance, and package type to ensure compatibility in your specific application. Always check the datasheets for precise specifications and ensure they meet the requirements of your design.

Features

The NTMFS4925NT1G is a Power MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) of 25V and supports a continuous drain current (I_D) of around 65A, making it suitable for medium-power applications.
2. Low On-Resistance: It features a low R_DS(on), which reduces conduction losses and improves overall efficiency.
3. High-Speed Switching: The MOSFET is designed for fast switching, which helps in reducing switching losses in high-frequency applications.
4. Package Type: It is housed in a compact, thermally efficient package, often a PowerPAK, which enhances heat dissipation and is ideal for space-constrained designs.
5. Enhanced Thermal Performance: The design includes excellent thermal characteristics, allowing it to handle higher power levels without overheating.
6. Applications: Commonly used in DC-DC converters, power supplies, motor drivers, and other applications requiring efficient power switching.
These features make the NTMFS4925NT1G suitable for various power management applications, balancing performance with efficiency.

Pinout

The NTMFS4925NT1G is a Power MOSFET from ON Semiconductor, designed for use in high-efficiency power management applications. It features an N-channel MOSFET structure. The component comes in a PowerPAK SO-8 package, which typically has 8 pins.
Key functions include:
1. Drain (D): Connects to the load or power supply.
2. Gate (G): Used to control the MOSFET's switching operations. A voltage applied here turns the device on or off.
3. Source (S): Connects to the ground or return path in the circuit.
In a typical configuration, pins might be assigned as follows (note: consult the specific datasheet for exact pin arrangement):
- Pins 1-3: Source
- Pin 4: Gate
- Pins 5-8: Drain
The NTMFS4925NT1G is optimized for low on-resistance and high-speed switching, making it suitable for applications like DC-DC converters, load switches, and other power management circuits. Always refer to the official datasheet for detailed pin configuration and electrical characteristics.

Manufacturer

The NTMFS4925NT1G is manufactured by ON Semiconductor. ON Semiconductor is a leading global supplier of semiconductor-based solutions. The company designs, manufactures, and markets a broad portfolio of products that include power management, analog, sensors, logic, timing, connectivity, discrete, SoC (System on Chip), and custom devices. These products are used in various automotive, industrial, cloud power, and IoT applications. ON Semiconductor is recognized for its focus on energy-efficient innovations, providing solutions that help reduce global energy use. The company aims to empower customers by enhancing performance and expanding possibilities across different technological landscapes.

Application

The NTMFS4925NT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Efficiently managing power distribution in electronic systems.
2. Automotive: Used in automotive electronic control units for systems like lighting and motor controls.
3. Consumer Electronics: Found in devices such as laptops, smartphones, and other portable electronics for battery management and power conversion.
4. Industrial: Employed in industrial automation and control systems.
5. Telecommunications: Used in power supply circuits for network and communication equipment.
These applications leverage the MOSFET's efficiency, low on-resistance, and fast switching capabilities.

Package

The NTMFS4925NT1G is a MOSFET that comes in a DFN (Dual Flat No-leads) package, specifically a 5mm x 6mm package size. This type of package improves thermal performance and allows for a more compact design in electronic applications.

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