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NTMFS5C604NLT1G
+Lista de MateriaisMOSFET N-CH 60V 38A 5DFN
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Fabricanteonsemi
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Peça do Fabricante #NTMFS5C604NLT1G
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Pacote TDFN-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 38A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.2mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 8900 pF @ 25 V |
| Power Dissipation (Max) | 3.9W (Ta), 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Visão Geral
Description
Key features of the NTMFS5C604NLT1G include a low R_DS(on) value, which helps reduce conduction losses, and a high threshold voltage for improved switching performance. The device is typically housed in a compact SMD package, facilitating easy integration into various circuit boards and designs.
The NTMFS5C604NLT1G is commonly used in power supply circuits, DC-DC converters, and other applications where efficient power handling is crucial. It also offers robustness and reliability under different operating conditions, making it a versatile choice for engineers looking to optimize power efficiency in their designs. Always refer to the manufacturer's datasheet for specific electrical characteristics and application guidance.
Equivalent
1. IRF540N from Infineon Technologies
2. FDP6030BL from ON Semiconductor
3. STP55NF06 from STMicroelectronics
Make sure to verify the specific electrical characteristics and package compatibility when selecting an equivalent.
Features
1. N-Channel MOSFET: It utilizes an N-channel configuration, which is typically favored for high-speed switching applications.
2. Low On-Resistance: The device offers low R_DS(on), improving efficiency by minimizing power loss during operation.
3. High Current Capacity: Supports high current flow, making it suitable for demanding power applications.
4. Enhanced Thermal Performance: Designed to handle thermal stresses efficiently, ensuring reliability under high-power conditions.
5. Compact Package: Comes in a small form factor, ideal for space-constrained applications.
6. Robust Build: Withstands high voltages and currents, enhancing device lifespan and performance.
7. Applications: Frequently used in power management, DC-DC converters, load switch applications, and other power control systems.
These features are indicative of a device designed for efficiency, reliability, and versatility in power management tasks.
Pinout
1. Drain: Typically has connections to multiple pins for better current handling; these are often internally connected.
2. Gate: Controls the switching of the MOSFET.
3. Source: The main current flow from source to drain is controlled by the gate.
In terms of function, this MOSFET is used for power management applications, including DC-DC converters, motor drivers, and other applications requiring efficient switching of heavy loads. It is known for its low on-resistance and fast switching capabilities, making it effective for high-efficiency power electronics.
Manufacturer
Application
1. DC-DC Converters: Utilized in power regulation and conversion for electronic devices.
2. Load Switches: Enables control over power distribution in systems.
3. Motor Drives: Suitable for driving motors in various industrial and consumer applications.
4. Battery Management: Used in circuits for charging and discharging control.
5. Consumer Electronics: Powers devices like laptops, tablets, and smartphones.
6. Automotive Systems: Integrated into electronic control units and power distribution modules for vehicles.
These applications benefit from the MOSFET's low on-resistance and high efficiency.