Imagens apenas para referência
NTMFS6H818NT1G
+Lista de MateriaisMOSFET N-CH 80V 20A/123A 5DFN
-
Fabricanteonsemi
-
Peça do Fabricante #NTMFS6H818NT1G
-
Em Estoque2896
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 123A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 190µA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 40 V |
| Power Dissipation (Max) | 3.8W (Ta), 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NTMFS6 |
Visão Geral
Description
The NTMFS6H818NT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. It features a low on-resistance (RDS(on)) of just a few milliohms, which minimizes power loss and heat generation during operation. This makes it suitable for use in various applications, including power supplies, DC-DC converters, and motor drives.
Key specifications include a maximum drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating of 80A, allowing for robust performance in demanding environments. The device is housed in a TO-220 package, facilitating easy heat dissipation and integration into PCB designs.
The NTMFS6H818NT1G is well-suited for applications requiring fast switching speeds, high efficiency, and reliable performance. Its characteristics make it a popular choice among engineers for designs that focus on energy efficiency and thermal management. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Key specifications include a maximum drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating of 80A, allowing for robust performance in demanding environments. The device is housed in a TO-220 package, facilitating easy heat dissipation and integration into PCB designs.
The NTMFS6H818NT1G is well-suited for applications requiring fast switching speeds, high efficiency, and reliable performance. Its characteristics make it a popular choice among engineers for designs that focus on energy efficiency and thermal management. Always refer to the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
The NTMFS6H818NT1G is a N-channel MOSFET. Equivalent products include the IRLZ44N FQP30N06L, and BSS138. It's important to compare specifications such as voltage, current rating, Rds(on), and package type for compatibility. Always verify with the manufacturer’s datasheet for precise replacements.
Features
The NTMFS6H818NT1G is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: 30V, suitable for low-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 60A, providing high performance in demanding conditions.
3. R_DS(on): Low on-resistance of approximately 7.1 mΩ, enhancing efficiency by reducing power losses.
4. Fast Switching: Designed for high-speed switching applications, making it ideal for DC-DC converters and power supplies.
5. Package Type: Available in a compact SO-8 package, facilitating space-saving designs.
6. Thermal Performance: Capable of dissipating heat effectively, improving reliability and longevity in operation.
7. RoHS Compliant: Environmentally friendly, free from hazardous materials.
These features make the NTMFS6H818NT1G suitable for a variety of applications, including automotive, industrial, and consumer electronics.
1. Voltage Rating: 30V, suitable for low-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 60A, providing high performance in demanding conditions.
3. R_DS(on): Low on-resistance of approximately 7.1 mΩ, enhancing efficiency by reducing power losses.
4. Fast Switching: Designed for high-speed switching applications, making it ideal for DC-DC converters and power supplies.
5. Package Type: Available in a compact SO-8 package, facilitating space-saving designs.
6. Thermal Performance: Capable of dissipating heat effectively, improving reliability and longevity in operation.
7. RoHS Compliant: Environmentally friendly, free from hazardous materials.
These features make the NTMFS6H818NT1G suitable for a variety of applications, including automotive, industrial, and consumer electronics.
Pinout
The NTMFS6H818NT1G is an N-channel MOSFET packaged in a 6-lead SOT-23 (Surface Mount Technology) configuration. It has a total of 6 pins.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's operation, turning it on or off based on the voltage applied.
2. Drain (D) - The output pin where the current flows out when the MOSFET is on.
3. Source (S) - The input pin where the current enters when the MOSFET is conducting.
4. Source (S) - Also serves as the second source connection for increased current handling capabilities.
5. Drain (D) - Second drain connection providing parallel paths for current flow.
6. Gate (G) - Second gate connection for improved drive capability.
This device is commonly used in power management applications, including load switching and DC-DC converters, due to its high efficiency and fast switching characteristics.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's operation, turning it on or off based on the voltage applied.
2. Drain (D) - The output pin where the current flows out when the MOSFET is on.
3. Source (S) - The input pin where the current enters when the MOSFET is conducting.
4. Source (S) - Also serves as the second source connection for increased current handling capabilities.
5. Drain (D) - Second drain connection providing parallel paths for current flow.
6. Gate (G) - Second gate connection for improved drive capability.
This device is commonly used in power management applications, including load switching and DC-DC converters, due to its high efficiency and fast switching characteristics.
Manufacturer
The NTMFS6H818NT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management solutions, analog products, and sensors. Established in 1999, the company serves various markets, including automotive, industrial, and consumer electronics.
ON Semiconductor focuses on providing energy-efficient solutions and has a strong commitment to sustainability. Their products are used in applications that require high performance, efficiency, and reliability, making them a key player in the semiconductor industry. The company is headquartered in Phoenix, Arizona, and operates globally, catering to the growing demand for innovative electronic solutions across multiple sectors.
ON Semiconductor focuses on providing energy-efficient solutions and has a strong commitment to sustainability. Their products are used in applications that require high performance, efficiency, and reliability, making them a key player in the semiconductor industry. The company is headquartered in Phoenix, Arizona, and operates globally, catering to the growing demand for innovative electronic solutions across multiple sectors.
Application
The NTMFS6H818NT1G is an N-channel MOSFET designed for various applications, including:
1. Power Management: Used in DC-DC converters and power supply circuits for efficient voltage regulation.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Switching Applications: Functions as a switch in high-speed switching circuits.
4. Load Switching: Utilized in electronic load switches for managing power to loads.
5. LED Drivers: Employed in circuits for driving LED lights efficiently.
6. Battery Management Systems: Used in systems for charging and discharging batteries safely.
Its low RDS(on) and fast switching capabilities make it ideal for these applications.
1. Power Management: Used in DC-DC converters and power supply circuits for efficient voltage regulation.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Switching Applications: Functions as a switch in high-speed switching circuits.
4. Load Switching: Utilized in electronic load switches for managing power to loads.
5. LED Drivers: Employed in circuits for driving LED lights efficiently.
6. Battery Management Systems: Used in systems for charging and discharging batteries safely.
Its low RDS(on) and fast switching capabilities make it ideal for these applications.
Package
The NTMFS6H818NT1G is packaged in a TO-220 form factor, which is a standard package type for power MOSFETs, offering good thermal performance and ease of mounting for heat dissipation.
