NTR2101PT1G

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NTR2101PT1G

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MOSFET P-CH 8V SOT23-3

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  • Peça do Fabricante #NTR2101PT1G

  • Pacote SOT-23

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain(Id) @ 25°C 3.7A (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V
Rds On(Max) @ Id Vgs 52mOhm @ 3.5A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 4.5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 1173 pF @ 4 V
Power Dissipation (Max) 960mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

Visão Geral

Equivalent

Equivalent products to the NTR2101PT1G (a P-channel MOSFET by ON Semiconductor) include:
- DMG2305UX (Diodes Incorporated)
- SI2305DS (Vishay)
- AO3401 (Alpha & Omega Semiconductor)
- FDC633P (Fairchild/ON Semi)
These are P-channel MOSFETs with similar specifications (e.g., -20V, -4A). Verify exact parameters (RDS(on), VGS(th)) for your application. Always check datasheets for compatibility.

Features

The NTR2101PT1G is an N-channel MOSFET with the following key features:
- Voltage Rating: 20V (Drain-to-Source, VDS)
- Current Rating: 6.3A (Continuous Drain Current, ID)
- Low On-Resistance: 28mΩ (max at VGS = 4.5V)
- Gate Threshold Voltage: 0.6V (min) to 1.2V (max)
- Fast Switching: Low gate charge (Qg = 8.5nC typical)
- Power Dissipation: 2W (max)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Designed for efficiency in low-voltage, high-current applications, it offers reliable performance in a small footprint.

Pinout

The NTR2101PT1G is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D): Output terminal, connected to the load.
Key Features:
- Voltage Rating: -20V (Drain-to-Source).
- Current Rating: -4.1A (continuous).
- Low RDS(on): 50mΩ (max) at VGS = -4.5V.
Used for power switching, load control, and battery management in compact designs.

Manufacturer

The NTR2101PT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions.
ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and discrete components for automotive, industrial, and consumer markets. The company is known for its innovation in power efficiency and reliability.
The NTR2101PT1G is a P-channel MOSFET, commonly used in power switching applications. ON Semiconductor's components are widely trusted in the electronics industry for their performance and durability.

Application

The NTR2101PT1G is a P-channel MOSFET commonly used in:
- Power Management: Load switching, power distribution.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- DC-DC Converters: Efficient voltage regulation.
- Automotive Systems: Low-power control circuits.
- Consumer Electronics: Power control in smartphones, tablets, and wearables.
Its compact SOT-23 package and low on-resistance make it ideal for space-constrained, energy-efficient applications.

Package

The NTR2101PT1G is a P-channel MOSFET in a SOT-23 surface-mount package. It is compact, suitable for low-power applications, and features a small footprint (2.9mm x 1.3mm). The SOT-23 package is widely used for its balance of size and performance in space-constrained designs.

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