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NTR4170NT1G
+Lista de MateriaisMOSFET N-CH 30V SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #NTR4170NT1G
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Pacote SOT-23-3
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 2.4A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 55mOhm @ 3.2A, 10V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.76 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 432 pF @ 15 V |
| Power Dissipation (Max) | 480mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Visão Geral
Description
The NTR4170NT1G is a type of N-channel MOSFET transistor designed for switching and amplification applications. It is commonly used in various electronic circuits due to its efficient power management capabilities. This MOSFET is crafted by ON Semiconductor, known for its reliability and performance in electronic components.
Key features of the NTR4170NT1G include low on-resistance, high-speed switching, and robust thermal performance, making it suitable for use in consumer electronics, automotive, and industrial applications. The device is housed in a compact package, allowing for efficient space utilization in circuit designs.
Additionally, the NTR4170NT1G operates with a low gate charge, which enhances its efficiency by reducing the power loss during switching operations. Its specifications make it a versatile component for engineers working on circuits that require precise control over electrical currents.
Overall, the NTR4170NT1G is a vital component in modern electronics, valued for its durability, efficiency, and adaptability to various applications.
Key features of the NTR4170NT1G include low on-resistance, high-speed switching, and robust thermal performance, making it suitable for use in consumer electronics, automotive, and industrial applications. The device is housed in a compact package, allowing for efficient space utilization in circuit designs.
Additionally, the NTR4170NT1G operates with a low gate charge, which enhances its efficiency by reducing the power loss during switching operations. Its specifications make it a versatile component for engineers working on circuits that require precise control over electrical currents.
Overall, the NTR4170NT1G is a vital component in modern electronics, valued for its durability, efficiency, and adaptability to various applications.
Equivalent
The NTR4170NT1G is a MOSFET transistor produced by ON Semiconductor. Equivalent products may include MOSFETs with similar voltage, current, and package specifications from other manufacturers. Possible equivalents are:
1. 2N7002 (various manufacturers)
2. BSS138 (various manufacturers)
3. IRLML6344TRPBF (Infineon Technologies)
4. Si2302 (Vishay)
5. DMN2075U (Diodes Incorporated)
Always verify electrical characteristics and package compatibility when selecting an equivalent.
1. 2N7002 (various manufacturers)
2. BSS138 (various manufacturers)
3. IRLML6344TRPBF (Infineon Technologies)
4. Si2302 (Vishay)
5. DMN2075U (Diodes Incorporated)
Always verify electrical characteristics and package compatibility when selecting an equivalent.
Features
The NTR4170NT1G is an N-channel MOSFET designed for various electronic applications. Key features of this component include:
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of up to 30V and a continuous drain current (I_D) of approximately 1.2A.
2. Low On-State Resistance: This MOSFET has a low R_DS(on), which ensures efficient operation and minimal power loss when the device is in the 'on' state.
3. Gate Threshold Voltage: It features a gate threshold voltage (V_GS(th)) that typically falls within a range suitable for low voltage drive applications.
4. Compact Package: The device is housed in a small SOT-23 package, making it ideal for space-constrained designs.
5. Thermal Management: It is designed with a capability to handle power dissipation efficiently, allowing for effective thermal management in various applications.
6. Applications: Commonly used in switching applications, load switching, and battery management systems due to its efficient performance.
These features make the NTR4170NT1G a versatile choice for designers needing a reliable and efficient MOSFET.
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of up to 30V and a continuous drain current (I_D) of approximately 1.2A.
2. Low On-State Resistance: This MOSFET has a low R_DS(on), which ensures efficient operation and minimal power loss when the device is in the 'on' state.
3. Gate Threshold Voltage: It features a gate threshold voltage (V_GS(th)) that typically falls within a range suitable for low voltage drive applications.
4. Compact Package: The device is housed in a small SOT-23 package, making it ideal for space-constrained designs.
5. Thermal Management: It is designed with a capability to handle power dissipation efficiently, allowing for effective thermal management in various applications.
6. Applications: Commonly used in switching applications, load switching, and battery management systems due to its efficient performance.
These features make the NTR4170NT1G a versatile choice for designers needing a reliable and efficient MOSFET.
Pinout
The NTR4170NT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is typically packaged in a small-outline SOT-23 package, which usually features 3 pins. Here is a brief overview of its pin configuration and function:
1. Source (S): This is the terminal through which the current enters the MOSFET. It is typically connected to the ground in N-channel MOSFET configurations.
2. Gate (G): This terminal is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the source and drain.
3. Drain (D): This is the terminal through which the current leaves the MOSFET.
The NTR4170NT1G is designed for various switching applications and is known for its low on-resistance and efficient power handling, making it suitable for compact electronics that require efficient power management.
1. Source (S): This is the terminal through which the current enters the MOSFET. It is typically connected to the ground in N-channel MOSFET configurations.
2. Gate (G): This terminal is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the source and drain.
3. Drain (D): This is the terminal through which the current leaves the MOSFET.
The NTR4170NT1G is designed for various switching applications and is known for its low on-resistance and efficient power handling, making it suitable for compact electronics that require efficient power management.
Manufacturer
The NTR4170NT1G is manufactured by ON Semiconductor, now officially known as onsemi. Onsemi is a prominent American semiconductor supplier company that focuses on various applications including automotive, industrial, cloud power, and Internet of Things (IoT). They provide a wide range of semiconductor solutions such as power management, analog, sensors, logic, timing, connectivity, discrete, system on chip (SoC), and custom devices.
Onsemi is known for its emphasis on energy-efficient innovations and has a significant presence in the global semiconductor market. They cater to a diverse set of industries by providing components that enable smart technology solutions.
Onsemi is known for its emphasis on energy-efficient innovations and has a significant presence in the global semiconductor market. They cater to a diverse set of industries by providing components that enable smart technology solutions.
Application
The NTR4170NT1G is a small-signal MOSFET commonly used in various applications due to its low on-state resistance and fast switching capabilities. Typical application areas include:
1. Switching Regulators: Used in DC-DC converters for efficient power management.
2. Load Switches: Acts as a switch in battery-powered devices to control power supply.
3. Level Shifting: Facilitates voltage level translation between different parts of a circuit.
4. Signal Processing: Employed in amplifying or switching electronic signals.
5. Portable Electronics: Utilized in smartphones, tablets, and other compact devices for power management and signal control.
These features make it suitable for consumer electronics, industrial controls, and automotive applications.
1. Switching Regulators: Used in DC-DC converters for efficient power management.
2. Load Switches: Acts as a switch in battery-powered devices to control power supply.
3. Level Shifting: Facilitates voltage level translation between different parts of a circuit.
4. Signal Processing: Employed in amplifying or switching electronic signals.
5. Portable Electronics: Utilized in smartphones, tablets, and other compact devices for power management and signal control.
These features make it suitable for consumer electronics, industrial controls, and automotive applications.
Package
The NTR4170NT1G is a N-channel MOSFET, and it is typically available in a SOT-23 package. The SOT-23 package is a small, surface-mount package that is widely used for compact electronic designs.
