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NTS4001NT1G
+Lista de MateriaisMOSFET N-CH 30V 270MA SC70-3
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Fabricanteonsemi
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Peça do Fabricante #NTS4001NT1G
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Pacote SOT-323
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Em Estoque4240
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 270mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4V |
| RdsOn(Max)@IdVgs | 1.5Ohm @ 10mA, 4V |
| Vgs(th)(Max)@Id | 1.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 1.3 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 33 pF @ 5 V |
| PowerDissipation(Max) | 330mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-70-3 (SOT323) |
Visão Geral
Description
Characteristics of the NTS4001NT1G may include features like low on-resistance, fast switching speed, and high current and voltage handling capabilities, which are typical for transistors in its class. It is designed to operate efficiently in various power management applications, such as DC-DC converters, motor controls, and as part of load-switching circuits.
These transistors are part of a family of components that adhere to industry standards for reliability and performance, ensuring that they perform under specified conditions. For precise specifications, datasheets provided by the manufacturer would detail parameters such as maximum drain-source voltage, continuous drain current, gate threshold voltage, and thermal characteristics.
Equivalent
1. BS170 - N-channel MOSFET from Fairchild/ON Semiconductor.
2. 2N7000 - Commonly used N-channel MOSFET.
3. ZVN3306A - N-channel MOSFET from Diodes Incorporated.
4. BSS138 - N-channel MOSFET suitable for low voltage applications.
Ensure compatibility in terms of voltage, current, and other specifications before substituting.
Features
1. N-Channel MOSFET: Designed for efficient voltage control and current flow, making it suitable for various electronic applications.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) of around 40V, making it robust for general switching tasks.
3. Current Handling: Can handle continuous drain current (I_D) typically in the range of a few amperes, ensuring suitability for moderate power applications.
4. Low On-Resistance: Features a low R_DS(on), which minimizes power loss and enhances efficiency in switching applications.
5. Compact Package: Usually available in a small SOT-23 package, facilitating ease of integration into space-constrained designs.
6. Thermal Management: Designed to operate efficiently with adequate thermal performance, supporting reliable operation over a range of temperatures.
7. Applications: Commonly used in power management, load switching, and other consumer electronics.
These features make the NTS4001NT1G a versatile choice for many low to moderate power electronic applications.
Pinout
1. Gate (G): This pin controls the MOSFET. A voltage applied to the gate allows current to flow between the drain and source in the case of an enhancement-mode device.
2. Source (S): This pin is the source of charge carriers, and current flows from the source to the drain when the MOSFET is on.
3. Drain (D): This pin is the outlet for the charge carriers and is where the current flows out of the MOSFET when it is conducting.
The NTS4001NT1G is typically used for low-voltage switching applications due to its low on-resistance and small size, making it suitable for compact designs.
Manufacturer
Application
1. Switching Circuits: Used for fast switching in low-power applications, such as power management and DC-DC converters.
2. Load Switches: Suitable for controlling power on/off state in portable devices.
3. Analog Switches: Employed in signal routing for audio and video switching.
4. Level Shifters: Facilitates communication between different voltage levels in mixed-signal circuits.
5. Battery Protection: Utilized in protecting battery-powered devices by managing charge and discharge cycles efficiently.
These applications leverage the MOSFET's ability to efficiently manage electrical signals and power.