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NVHL020N120SC1
+Lista de MateriaisSICFET N-CH 1200V 103A TO247-3
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Fabricanteonsemi
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Peça do Fabricante #NVHL020N120SC1
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Ficha Técnica NVHL020N120SC1 DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Base Product Number | NVHL020 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 60A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 203 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890 pF @ 800 V |
| Power Dissipation (Max) | 535W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
Visão Geral
Description
Key features of the NVHL020N120SC1 include:
1. Voltage and Current Ratings: It typically features a high voltage rating, often around 1200V, suitable for demanding applications, and a continuous current capability that supports high-power operations.
2. Low On-Resistance: This MOSFET offers low on-resistance, which minimizes power loss during operation, contributing to improved efficiency.
3. Rugged Design: The device is designed to withstand high levels of stress in harsh environments, making it ideal for industrial and automotive applications.
4. Fast Switching Speed: It supports fast switching, which reduces energy loss in power conversion systems.
The NVHL020N120SC1 is commonly utilized in applications such as power supplies, motor drives, and inverter circuits, where efficient and reliable power management is critical.
Equivalent
1. C3M0021120K by Wolfspeed
2. SCT3030AL by ROHM Semiconductor
3. APT40SM120B by Microsemi
4. SCT2120AF by ROHM Semiconductor
Please confirm the exact specifications and compatibility before making a substitution, as variations in packaging or performance may exist.
Features
1. Voltage Rating: It has a blocking voltage of 1200 volts, suitable for high-voltage applications.
2. Current Capacity: The device can handle a continuous drain current of up to 20 Amperes.
3. RDS(on): It offers a low on-resistance (RDS(on)) of approximately 80 milliohms, which helps reduce conduction losses.
4. High Efficiency: The SiC technology provides higher efficiency compared to silicon MOSFETs, especially at high frequencies.
5. Fast Switching: It offers fast switching capabilities, which helps in reducing switching losses and improving overall performance.
6. Thermal Performance: Superior thermal performance allows for operation in high-temperature environments, enhancing reliability.
7. Robust Design: It is designed to withstand harsh conditions, offering high durability and longevity.
These features make the NVHL020N120SC1 ideal for applications such as power supplies, motor drives, and renewable energy systems, where efficiency and reliability are critical.
Pinout
1. Gate: This pin is used to control the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain: This is the pin through which the main current flows when the MOSFET is turned on. It connects to the load in most applications.
3. Source: This pin is the return path for the current flowing through the MOSFET. It is typically connected to the ground or the negative side of the power supply.
These pins enable the MOSFET to function effectively as a switch or amplifier in high-power and high-frequency applications, leveraging the benefits of SiC technology for improved efficiency and thermal performance.