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NVMFD5C462NLT1G
+Lista de MateriaisMOSFET 2N-CH 40V 84A S08FL
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 40V |
| Current-ContinuousDrain(Id)@25°C | 18A (Ta), 84A (Tc) |
| RdsOn(Max)@IdVgs | 4.7mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 40µA |
| GateCharge(Qg)(Max)@Vgs | 11nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 1300pF @ 25V |
| Power-Max | 3W (Ta), 50W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-PowerTDFN |
Visão Geral
Description
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.6mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: DFN5 (5x6mm), offering compact size and good thermal performance
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.
Equivalent
- AO3400A (30V, 5.8A)
- SI2302DS (20V, 4.1A)
- DMN3010LSS (30V, 5.7A)
- IRLML6244TRPBF (20V, 6.3A)
Check datasheets for exact specs like RDS(on), package, and current ratings.
Features
- Interface: PCIe Gen3 x4 (NVMe 1.3)
- Form Factor: M.2 2280 (single-sided)
- Sequential Read/Write: Up to 3,400/3,200 MB/s
- Endurance: 320 TBW (Terabytes Written)
- NAND Type: 96-layer 3D TLC
- DRAM Cache: Yes (improves performance)
- Power Efficiency: Low-power L1.2 state support
- Security: AES 256-bit encryption, TCG Opal 2.0
- Reliability: 1.5M hours MTBF
Ideal for gaming, content creation, and general storage with fast boot/load times.
Manufacturer
Key details:
- Manufacturer: ON Semiconductor
- Product Type: MOSFET (likely a power transistor)
- Industry Focus: Automotive, industrial, IoT, and power electronics.
ON Semiconductor is a reputable, publicly traded company (Nasdaq: ON) with a strong presence in semiconductor innovation.