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NVMFS5C670NT1G
+Lista de MateriaisMOSFET N-CH 60V 17A/71A 5DFN
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Fabricanteonsemi
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Peça do Fabricante #NVMFS5C670NT1G
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Em Estoque18012
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Especificações
| Atributo | Valor |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Ta), 71A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 7mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 53µA |
| Gate Charge(Qg)(Max) @ Vgs | 14.4 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1035 pF @ 30 V |
| Power Dissipation (Max) | 3.6W (Ta), 61W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Visão Geral
Description
Key features of the NVMFS5C670NT1G include low RDS(on) for reduced conduction losses, which enhances its overall efficiency and thermal performance. The device is housed in a compact, surface-mount package, making it suitable for space-constrained applications. Additionally, it boasts robust ruggedness and reliability, ensuring long-term performance in demanding environments.
The NVMFS5C670NT1G is often selected for applications requiring high-speed switching and low on-resistance. Its design and specifications make it a versatile choice for engineers looking to optimize power efficiency and reliability in their electronic designs. For detailed technical specifications, users should refer to the manufacturer's datasheet.
Equivalent
Features
1. N-Channel MOSFET: It is an N-channel MOSFET, commonly used for its efficiency in high-speed switching.
2. Low On-Resistance: Offers low on-resistance, which helps in reducing power loss and improving overall efficiency in power management applications.
3. High Current Handling: Capable of handling high current levels, making it suitable for use in demanding power applications.
4. Compact Package: Available in a compact package, facilitating its use in space-constrained designs while maintaining high performance.
5. Enhanced Ruggedness: Designed to withstand high levels of electrical stress and thermal conditions, thereby enhancing its durability and reliability across various applications.
6. Wide Range of Applications: Suitable for use in automotive, industrial, and consumer electronics, especially where efficient power management is critical.
These features make the NVMFS5C670NT1G an excellent choice for efficient and reliable power management solutions.
Pinout
Key Functions:
1. Drain (D): The main current-carrying terminal, connected to the load.
2. Gate (G): The control terminal, used to turn the MOSFET on or off by applying a voltage.
3. Source (S): The terminal connected to the ground or return path of the circuit.
The SO-8FL package typically provides low on-resistance and excellent thermal performance, making it suitable for high-power applications. The NVMFS5C670NT1G is optimized for low switching losses and high-speed operation, contributing to energy-efficient automotive designs. For specific pin configuration and detailed electrical characteristics, always refer to the official datasheet provided by the manufacturer.
Manufacturer
Application
1. Automotive Systems: Used in electric vehicles and other automotive applications for power management and motor control.
2. Power Supplies: Suitable for use in DC-DC converters and switching power supplies.
3. Industrial Equipment: Utilized in motor drives, robotics, and other industrial automation systems.
4. Consumer Electronics: Found in devices needing efficient power conversion, such as laptops and battery chargers.
5. Renewable Energy Systems: Employed in solar inverters and other renewable energy applications for effective power conversion and management.
These applications leverage its low on-resistance and high-efficiency characteristics.