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NVTFS4C25NTAG
+Lista de MateriaisMOSFET N-CH 30V 10.1A/22.1A 8DFN
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Fabricanteonsemi
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Peça do Fabricante #NVTFS4C25NTAG
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Ficha Técnica NVTFS4C25NTAG DataSheet
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Especificações
| Atributo | Valor |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 10.1A (Ta), 22.1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 17mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 500 pF @ 15 V |
| Power Dissipation (Max) | 3W (Ta), 14.3W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
Visão Geral
Description
If NVTFS4C25NTAG is indeed a component, typical aspects to consider might include:
1. Functionality: What the component is designed to do within a system, e.g., processing, controlling, or converting inputs.
2. Specifications: Key technical specifications such as voltage, current capacity, or speed.
3. Applications: Industries or scenarios where it’s commonly used, like automotive, computing, or telecommunications.
4. Advantages: Benefits over previous models or competitors, such as increased efficiency, durability, or cost-effectiveness.
For precise information, it's advisable to refer to the manufacturer's datasheet or product documentation.
Equivalent
1. Infineon Technologies: BSC026N04LS
2. Vishay: SI4435DDY
3. STMicroelectronics: STL25N4LLF6
4. Texas Instruments: CSD18535KCS
These equivalents should be checked for specific electrical characteristics and package compatibility to ensure they meet your design requirements.
Features
1. N-Channel MOSFET: It operates as an N-channel enhancement-mode field-effect transistor.
2. Low On-Resistance: This MOSFET offers low on-state resistance, ensuring minimal power loss during operation, which is ideal for high-efficiency circuits.
3. Fast Switching Speed: It is designed to switch on and off rapidly, making it suitable for high-frequency applications.
4. Compact Package: The device is typically available in a compact surface-mount package, which is beneficial for space-constrained designs.
5. Thermal Performance: It has good thermal characteristics, allowing it to handle substantial power levels without overheating.
6. Robust Design: It includes features that protect against voltage spikes and other electrical stresses.
7. Wide Range of Applications: This MOSFET can be used in DC-DC converters, power management in battery-operated devices, motor drives, and other power electronics applications.
These features make the NVTFS4C25NTAG a versatile component in various electronic designs requiring efficient power management.
Pinout
In terms of function, this MOSFET is used for switching and amplification in electronic circuits. Its low on-resistance and high efficiency make it suitable for power management applications, including load switching and DC-DC conversion. The specific pin functions include:
1. Gate: For receiving the control voltage to turn the MOSFET on or off.
2. Drain: The output for the current flow controlled by the gate voltage.
3. Source: The input where current enters the MOSFET.
For precise pin configuration and usage, you should refer to the specific datasheet of the NVTFS4C25NTAG from the manufacturer.
Manufacturer
Application
1. Power Management: Used in power supply circuits for voltage regulation and load switching.
2. Motor Control: Suitable for driving motors in industrial and consumer electronics.
3. Automotive Systems: Applied in automotive electronics for battery management and switching.
4. Consumer Electronics: Found in devices like laptops and smartphones for power control.
5. LED Lighting: Utilized in controlling LED brightness and power efficiency.
These applications leverage the MOSFET's low on-resistance, fast switching speed, and thermal efficiency.