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NVTR4502PT1G
+Lista de MateriaisMOSFET P-CH 30V 1.13A SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #NVTR4502PT1G
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Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.13A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.95A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 15 V |
| Power Dissipation (Max) | 400mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | NVTR4502 |
Visão Geral
Description
NVTR4502PT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. This component is known for its low on-resistance, enabling efficient operation with minimal heat generation. Its voltage rating typically supports high-voltage applications, making it suitable for power supplies, motor drivers, and other electronic circuits requiring reliable switching capabilities.
The device features fast switching speeds, which enhance overall circuit performance, particularly in applications where rapid response is crucial. The package type often includes TO-220 or similar configurations, facilitating easy installation and heat dissipation.
Engineered for robustness, the NVTR4502PT1G is suitable for both consumer electronics and industrial applications, meeting rigorous quality standards. Its versatility and efficiency make it a popular choice among engineers looking to optimize power delivery in their designs.
The device features fast switching speeds, which enhance overall circuit performance, particularly in applications where rapid response is crucial. The package type often includes TO-220 or similar configurations, facilitating easy installation and heat dissipation.
Engineered for robustness, the NVTR4502PT1G is suitable for both consumer electronics and industrial applications, meeting rigorous quality standards. Its versatility and efficiency make it a popular choice among engineers looking to optimize power delivery in their designs.
Equivalent
The NVTR4502PT1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and SI2302. When selecting a substitute, ensure that the voltage, current ratings, and package type match your application requirements. Always check the specific datasheets for detailed specifications to ensure compatibility.
Features
The NVTR4502PT1G is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 30A, enabling robust performance in demanding conditions.
3. R_DS(on): Offers a low on-resistance of approximately 9 mΩ, minimizing power loss and improving thermal performance.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with low-voltage driving circuits.
5. Package Type: Available in a TO-220 package, which enhances thermal dissipation and ease of mounting.
6. Applications: Ideal for switch mode power supplies, automotive applications, and other power conversion systems.
Overall, the NVTR4502PT1G is optimized for high-efficiency switching and power handling in various electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various applications.
2. Current Rating: Supports continuous drain current (I_D) of up to 30A, enabling robust performance in demanding conditions.
3. R_DS(on): Offers a low on-resistance of approximately 9 mΩ, minimizing power loss and improving thermal performance.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with low-voltage driving circuits.
5. Package Type: Available in a TO-220 package, which enhances thermal dissipation and ease of mounting.
6. Applications: Ideal for switch mode power supplies, automotive applications, and other power conversion systems.
Overall, the NVTR4502PT1G is optimized for high-efficiency switching and power handling in various electronic applications.
Manufacturer
The NVTR4502PT1G is manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions. The company specializes in a wide range of products including analog, digital, and mixed-signal semiconductors, as well as power management technologies. ON Semiconductor serves various industries such as automotive, industrial, communications, and consumer electronics. The company is known for its focus on energy-efficient and environmentally friendly technologies, contributing to advancements in various applications from automotive safety systems to industrial automation. With a commitment to innovation, ON Semiconductor is positioned as a key player in the semiconductor industry, aiming to provide high-performance solutions that meet the growing demands of modern electronic devices.
Application
The NVTR4502PT1G is a high-speed, low-voltage N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, load switching, power routing, and battery management systems. It is suitable for use in consumer electronics, automotive systems, and industrial devices due to its efficiency and thermal performance. Additionally, it can be employed in telecom and computer applications where compact size and high switching speed are essential.
Package
The NVTR4502PT1G is packaged in a SOT-23 surface mount package. This compact package type is commonly used for transistors and other semiconductor devices, providing a balance of size and thermal performance.
