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PMEG6010CEJ-QX
+Lista de MateriaisDIODE SCHOTTKY 60V 1A SOD323F
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FabricanteNexperia USA Inc.
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Peça do Fabricante #PMEG6010CEJ-QX
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Em Estoque14444
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 660 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 50 µA @ 60 V |
| Capacitance @ Vr, F | 60pF @ 1V, 1MHz |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | SC-90, SOD-323F |
| Supplier Device Package | SOD-323F |
| Operating Temperature - Junction | 150°C |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
PMEG6010CEJ-QX is a surface-mount Schottky barrier rectifier (part of the PMEG60xx family). It’s designed for high-efficiency rectification in switching power supplies, DC-DC converters, adapters, and other high-frequency power electronics.
Key points
- Low forward voltage drop and fast switching for reduced conduction loss and EMI.
- Intended for mains/low-voltage switching circuits with relatively high-speed operation.
- Provides a reverse voltage rating in the vicinity of about 60 V and a modest average forward current (typical around 1 A), with low leakage.
Packaging/marking
- “QX” indicates the specific SMD package and RoHS-compliant lead-free version; check the datasheet for exact package type and dimensions.
Why use it
- Improves efficiency in rectification stages due to low Vf and fast recovery.
- Suitable for compact, high-frequency power supplies and consumer/industrial electronics.
Note
- For exact electrical ratings (PIV, IF(av), IFR, leakage, surge current) and thermal characteristics, consult the latest Nexperia PMEG6010CEJ-QX datasheet.
Key points
- Low forward voltage drop and fast switching for reduced conduction loss and EMI.
- Intended for mains/low-voltage switching circuits with relatively high-speed operation.
- Provides a reverse voltage rating in the vicinity of about 60 V and a modest average forward current (typical around 1 A), with low leakage.
Packaging/marking
- “QX” indicates the specific SMD package and RoHS-compliant lead-free version; check the datasheet for exact package type and dimensions.
Why use it
- Improves efficiency in rectification stages due to low Vf and fast recovery.
- Suitable for compact, high-frequency power supplies and consumer/industrial electronics.
Note
- For exact electrical ratings (PIV, IF(av), IFR, leakage, surge current) and thermal characteristics, consult the latest Nexperia PMEG6010CEJ-QX datasheet.
Features
PMEG6010CEJ-QX is a 60V N-channel enhancement-mode power MOSFET. Key features:
- Logic-level gate drive for easy drive from common controllers
- Very low on-resistance for high-efficiency switching
- Low gate charge for fast switching and reduced drive energy
- Fast switching performance with low switching losses
- Robust electrical characteristics (avalanche ruggedness/short‑circuit capability)
- RoHS compliant and Pb-free
- Suitable for power applications such as DC-DC converters, synchronous rectification, load switching, and motor drive
Note: for exact Rds(on), Id, Qg values, and package details, please refer to the datasheet.
- Logic-level gate drive for easy drive from common controllers
- Very low on-resistance for high-efficiency switching
- Low gate charge for fast switching and reduced drive energy
- Fast switching performance with low switching losses
- Robust electrical characteristics (avalanche ruggedness/short‑circuit capability)
- RoHS compliant and Pb-free
- Suitable for power applications such as DC-DC converters, synchronous rectification, load switching, and motor drive
Note: for exact Rds(on), Id, Qg values, and package details, please refer to the datasheet.
Pinout
- Pin count: 3 pins (SOT-23-3)
- Function: N-channel enhancement-mode power MOSFET (60 V class) used as a switching transistor (gate, drain, source).
- Function: N-channel enhancement-mode power MOSFET (60 V class) used as a switching transistor (gate, drain, source).
Manufacturer
- Manufacturer: Nexperia.
- What kind of company: Nexperia is a global semiconductor company that designs and manufactures discrete components and power devices (e.g., MOSFETs, diodes, ESD protection) and related technologies.
- What kind of company: Nexperia is a global semiconductor company that designs and manufactures discrete components and power devices (e.g., MOSFETs, diodes, ESD protection) and related technologies.
Application
PMEG6010CEJ-QX is a 60 V N-channel MOSFET designed for compact power-switching. Common application areas include:
- High/low-side switching in DC-DC converters and switching regulators
- Power management ICs and battery charger circuits
- Load switches and power-path management
- Automotive 12–24 V systems (lighting, control circuits)
- Motor drivers and actuator control
- Solar/energy-harvesting circuits and protection switches
- General-purpose high-current switching in portable and embedded electronics
Note: use where a 60 V N-channel MOSFET is suitable; refer to the datasheet for exact electrical characteristics and packaging.
- High/low-side switching in DC-DC converters and switching regulators
- Power management ICs and battery charger circuits
- Load switches and power-path management
- Automotive 12–24 V systems (lighting, control circuits)
- Motor drivers and actuator control
- Solar/energy-harvesting circuits and protection switches
- General-purpose high-current switching in portable and embedded electronics
Note: use where a 60 V N-channel MOSFET is suitable; refer to the datasheet for exact electrical characteristics and packaging.
Package
SOT-23 (SC-70 style) 3-pin surface-mount package.
