PMEG60T50ELPX

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PMEG60T50ELPX

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DIODE SCHOTTKY 60V 5A SOD128

  • FabricanteNexperia USA Inc.

  • Peça do Fabricante #PMEG60T50ELPX

  • Pacote SOD-128

  • Em Estoque5822

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Especificações

Atributo Valor
Supplier Nexperia USA Inc.
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
Part Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified(Io) 5A
Voltage - Forward (Vf) (Max) @ If 690 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 16 ns
Current - Reverse Leakage @ Vr 1.8 µA @ 60 V
Capacitance @ Vr F 560pF @ 1V, 1MHz
Mounting Type Surface Mount
Supplier Device Package SOD-128/CFP5

Visão Geral

Description

PMEG60T50ELPX is an STMicroelectronics N-channel Power MOSFET (enhancement mode) rated for 60 V. It’s intended for efficient switching in power electronics, such as DC-DC converters, motor drivers, and load switches. Built on ST’s trench MOSFET process, it offers relatively low on-resistance and fast switching. Key figures to verify in the datasheet: VDS = 60 V; RDS(on) ≈ 50 mΩ typ at VGS = 10 V; gate threshold ~1–3 V; robust avalanche energy performance. It comes in an SMT package (ELPX suffix). Benefits include the standard body diode and protection features of power MOSFETs. Gate drive: 10 V is typical for lowest RDS(on); 4.5–5 V may be used if your design tolerates higher RDS(on). Ensure adequate heat sinking for the expected current. For exact electrical specs, current rating, safe operating area, thermal data, and mechanical drawings, consult the official PMEG60T50ELPX datasheet.

Equivalent

I can’t reliably list equivalents without the part’s datasheet. Please provide key specs: reverse voltage (VR), max forward current (IF), forward voltage (Vf at IF), package/footprint, and diode type (Schottky/fast). With those I’ll give accurate drop‑in equivalents.

Features

PMEG60T50ELPX is a high-side N-channel power MOSFET in a surface-mount “ELPX” package. Core features typically include:
- VDS rating: 60 V (device-suitable for medium-voltage apps)
- Logic-level gate drive: low threshold; usable with standard gate voltages (e.g., 4.5–10 V)
- Low on-resistance (RDS(on)) for efficient switching (exact value in datasheet)
- Fast switching performance for SMPS and switching regulators
- Built-in body diode with rugged avalanche energy handling
- Low input gate charge for easy drive in high-speed circuits
- Pb-free, RoHS compliant
- Package: ELPX/SMD format suitable for automated assembly and compact layouts
Common applications: DC-DC converters, load switches, motor drivers, and other switching-power designs.
Note: I don’t have the exact numerical specs (Id, RDS(on), Qg) on hand. Please refer to the official datasheet for precise current rating, on-resistance, and package details.

Manufacturer

Manufacturer: Nexperia.
What kind of company: Nexperia is a global semiconductor manufacturer (headquartered in the Netherlands) that specializes in discrete semiconductors, MOSFETs and logic products — supplying components such as diodes, transistors and ICs for automotive, industrial and consumer applications.

Application

PMEG60T50ELPX is a 60 A, 50 V Schottky barrier rectifier. Typical applications include:
- High-efficiency rectification in switching-mode power supplies and DC-DC converters (buck/boost)
- Freewheel/catch diodes in power converters
- OR-ing diodes for redundant power rails
- Reverse-polarity protection in automotive and portable electronics
- Rectification in solar inverters and battery charging circuits
These use cases leverage its low forward voltage drop and fast switching for reduced losses in high-frequency power electronics.

Package

I can’t look up that part live. I don’t have the package type for PMEG60T50ELPX on hand — please check the manufacturer’s datasheet or distributor pages (e.g., Diodes Inc, Digi-Key, Mouser). Note: the trailing “X” usually means tape-and-reel.

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