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PMV55ENEAR
+Lista de MateriaisMOSFET N-CH 60V 3.1A TO236AB
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FabricanteNexperia USA Inc.
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Peça do Fabricante #PMV55ENEAR
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Especificações
| Atributo | Valor |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 3.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 60mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 2.7V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 646 pF @ 30 V |
| Power Dissipation (Max) | 478mW (Ta), 8.36W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Visão Geral
Description
PMV55EN is a 55-volt N-channel MOSFET (enhancement mode) from the PMV/NXP family. It’s used as a switching element in power supplies, DC-DC converters, motor drivers, and load switches.
Key points
- Type: N-channel, enhancement mode; designed for low-cost, compact power switching.
- Vds: around 55 V; gate drive typically logic-level (low Vgs threshold, suitable for 4–10 V drive in many designs).
- Rds(on) and Id: optimized for low conduction loss and moderate current handling in SMT packages; exact values vary by variant and package.
- Packages: common SMT options (SOT-23, DPAK/TO‑252 variants) depending on the exact part marking.
- Use notes: G–D–S pinout; drive from a suitable gate voltage with protection (GHz-friendly switching speed, but mind switching losses and SOA).
About “EAR”: likely a date/lot or package variant code; it doesn’t change the device function. For precise electrical specs, consult the exact datasheet for the specific package/revision. If you share the supplier or link, I can pull the exact figures.
Key points
- Type: N-channel, enhancement mode; designed for low-cost, compact power switching.
- Vds: around 55 V; gate drive typically logic-level (low Vgs threshold, suitable for 4–10 V drive in many designs).
- Rds(on) and Id: optimized for low conduction loss and moderate current handling in SMT packages; exact values vary by variant and package.
- Packages: common SMT options (SOT-23, DPAK/TO‑252 variants) depending on the exact part marking.
- Use notes: G–D–S pinout; drive from a suitable gate voltage with protection (GHz-friendly switching speed, but mind switching losses and SOA).
About “EAR”: likely a date/lot or package variant code; it doesn’t change the device function. For precise electrical specs, consult the exact datasheet for the specific package/revision. If you share the supplier or link, I can pull the exact figures.
Equivalent
PMV55ENEAR is a 55 V N-channel MOSFET from NXP. Exact equivalents depend on package and specs (Rds(on), Id). Please specify package (SOT-23, DPAK, etc.) and required electricals (Vds, Id, Rds(on), Vth). I can then provide precise cross-reference equivalents from Infineon, ST, Vishay, etc., with distributor links.
Features
Here are the typical features of PMV55EN (Nexperia) N-channel power MOSFET:
- N-channel enhancement-mode MOSFET
- Drain–Source voltage: 55 V
- Logic-level gate drive (fully on at around 4.5 V)
- Very low on-resistance for high efficiency
- High continuous/pulsed drain current capability
- Fast switching with low input gate charge
- Intrinsic body diode; robust with avalanche energy handling
- Suitable for high-side/low-side switch applications
- RoHS-compliant, Pb-free; available in common power packages (e.g., DPAK/TO-252)
Note: exact Rds(on), Id rating, and packaging variants vary by lot; consult the datasheet for precise specs.
- N-channel enhancement-mode MOSFET
- Drain–Source voltage: 55 V
- Logic-level gate drive (fully on at around 4.5 V)
- Very low on-resistance for high efficiency
- High continuous/pulsed drain current capability
- Fast switching with low input gate charge
- Intrinsic body diode; robust with avalanche energy handling
- Suitable for high-side/low-side switch applications
- RoHS-compliant, Pb-free; available in common power packages (e.g., DPAK/TO-252)
Note: exact Rds(on), Id rating, and packaging variants vary by lot; consult the datasheet for precise specs.
Pinout
- Pin count: 3 leads (G, D, S).
- Function: N-channel enhancement-mode power MOSFET (55 V) used as a switching transistor; Drain is typically connected to the package tab.
- Function: N-channel enhancement-mode power MOSFET (55 V) used as a switching transistor; Drain is typically connected to the package tab.
Manufacturer
- Manufacturer: Nexperia
- What kind of company: A global semiconductor company specializing in discrete devices and protection components, including power MOSFETs, diodes, and ESD/TVS protection for automotive, industrial, and consumer electronics.
- What kind of company: A global semiconductor company specializing in discrete devices and protection components, including power MOSFETs, diodes, and ESD/TVS protection for automotive, industrial, and consumer electronics.
Application
PMV55EN is a 55 V N-channel MOSFET. Typical application areas include:
- High-speed switching in DC-DC converters and voltage regulators
- High-side/low-side switching in power-management circuits
- Motor control and drivers for small DC motors
- Automotive electronics and body electronics (55 V rail)
- Solar/battery-powered and energy-harvesting circuits
- General-purpose load switching in consumer electronics
- High-speed switching in DC-DC converters and voltage regulators
- High-side/low-side switching in power-management circuits
- Motor control and drivers for small DC motors
- Automotive electronics and body electronics (55 V rail)
- Solar/battery-powered and energy-harvesting circuits
- General-purpose load switching in consumer electronics
Package
PMV55ENEAR is a N-channel MOSFET in a surface-mount DPAK package (TO-252).
