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PSMN2R4-30YLD
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Description
### Key Features:
- Low On-Resistance (RDS(on)): 2.4 mΩ (max), reducing conduction losses.
- High Current Handling: Up to 100A (pulsed), suitable for high-power applications.
- Fast Switching: Optimized for high-frequency operation.
- Logic-Level Gate Drive: Compatible with 5V/10V drive signals.
- Robust Packaging: LFPAK56 (Power-SO8) for efficient thermal dissipation.
### Typical Applications:
- Automotive systems (e.g., ECU power management).
- Industrial power supplies and battery management.
- Synchronous rectification in SMPS.
This MOSFET balances low power loss and high reliability, making it ideal for compact, energy-efficient designs. For detailed specs, refer to the datasheet.
Equivalent
- Infineon IPB180N04S4-03 (40V, 1.8mΩ)
- Vishay SiSS52DN (30V, 2.1mΩ)
- ON Semiconductor NVMYS0020NWG (30V, 2.0mΩ)
- STMicroelectronics STL160N4LF3 (40V, 1.6mΩ)
Check datasheets for exact compatibility in your application.
Features
Key Features:
- Low On-Resistance (RDS(on)): 2.4 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Up to 100A (pulsed) for robust performance.
- Fast Switching: Low gate charge (Qg) and output capacitance (Coss) for efficient high-frequency operation.
- AEC-Q101 Qualified: Suitable for automotive applications.
- Thermal Performance: Low thermal resistance (Rth(j-a)) for better heat dissipation.
- Package: LFPAK56 (Power-SO8), compact and PCB-friendly.
Applications:
- Synchronous rectification in DC-DC converters.
- Motor drives, load switches, and power management.
Summary: High-current, low-loss MOSFET with automotive-grade reliability.