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RFD14N05LSM9A
+Lista de MateriaisMOSFET N-CH 50V 14A TO252AA
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Peça do Fabricante #RFD14N05LSM9A
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Ficha Técnica RFD14N05LSM9A DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
| Power Dissipation (Max) | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | RFD14N05 |
Visão Geral
Description
The RFD14N05LSM9A is a N-channel MOSFET designed for compact, efficient power management applications. It features a low on-resistance (RDS(on)) of 14 mOhms, enabling effective current flow with minimal power loss. The device is suitable for high-speed switching applications, making it ideal for use in power supplies, motor drivers, and DC-DC converters.
With a maximum drain-source voltage (VDS) rating of 50V, the RFD14N05LSM9A can handle significant voltage levels while maintaining performance. Its thermal resistance characteristics allow for efficient heat dissipation, enhancing reliability and longevity in various operating conditions.
The package is often compact, allowing for space-saving designs in modern electronics. Overall, the RFD14N05LSM9A is a versatile choice for engineers looking to optimize power efficiency and performance in their designs.
With a maximum drain-source voltage (VDS) rating of 50V, the RFD14N05LSM9A can handle significant voltage levels while maintaining performance. Its thermal resistance characteristics allow for efficient heat dissipation, enhancing reliability and longevity in various operating conditions.
The package is often compact, allowing for space-saving designs in modern electronics. Overall, the RFD14N05LSM9A is a versatile choice for engineers looking to optimize power efficiency and performance in their designs.
Equivalent
The RFD14N05LSM9A is an N-channel MOSFET with specific voltage and current ratings. Equivalent products include the IRF540, BSS140, and STP14NM05. Always check the datasheets for pin configuration, ratings, and characteristics to ensure compatibility in your application.
Features
The RFD14N05LSM9A is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage (V_DS) of 50V, making it suitable for various power management applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 14A, offering robust performance in demanding conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) of around 0.014Ω ensures minimal power loss and enhanced efficiency during operation.
4. Gate Threshold Voltage: Features a typical gate threshold voltage (V_GS(th)) of 2-4V, which allows for effective switching at lower gate voltages.
5. Package Type: Available in a DPAK package, facilitating easy integration into compact designs.
6. Fast Switching Speed: Suitable for high-frequency applications due to its quick switching capabilities.
7. Thermal Performance: Excellent thermal characteristics for reliable operation under high-load conditions.
These features make the RFD14N05LSM9A ideal for power supplies, motor drivers, and other high-efficiency applications.
1. Voltage Rating: Operates at a maximum drain-source voltage (V_DS) of 50V, making it suitable for various power management applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of 14A, offering robust performance in demanding conditions.
3. R_DS(on): Low on-resistance (R_DS(on)) of around 0.014Ω ensures minimal power loss and enhanced efficiency during operation.
4. Gate Threshold Voltage: Features a typical gate threshold voltage (V_GS(th)) of 2-4V, which allows for effective switching at lower gate voltages.
5. Package Type: Available in a DPAK package, facilitating easy integration into compact designs.
6. Fast Switching Speed: Suitable for high-frequency applications due to its quick switching capabilities.
7. Thermal Performance: Excellent thermal characteristics for reliable operation under high-load conditions.
These features make the RFD14N05LSM9A ideal for power supplies, motor drivers, and other high-efficiency applications.
Pinout
The RFD14N05LSM9A is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET, determining when the device is turned on or off by applying a voltage.
2. Drain (D): The pin through which current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin allows current to flow into the MOSFET from the source side.
4. Gate-Source Voltage (Vgs): This is the voltage applied between the gate and source pins to turn the MOSFET on.
5. Drain-Source Voltage (Vds): This is the voltage between the drain and source when the device is active.
This MOSFET is typically used in power applications due to its high efficiency and low on-resistance, making it suitable for switching and amplification tasks in various electronic circuits.
1. Gate (G): This pin controls the MOSFET, determining when the device is turned on or off by applying a voltage.
2. Drain (D): The pin through which current flows out of the MOSFET when it is in the on state.
3. Source (S): This pin allows current to flow into the MOSFET from the source side.
4. Gate-Source Voltage (Vgs): This is the voltage applied between the gate and source pins to turn the MOSFET on.
5. Drain-Source Voltage (Vds): This is the voltage between the drain and source when the device is active.
This MOSFET is typically used in power applications due to its high efficiency and low on-resistance, making it suitable for switching and amplification tasks in various electronic circuits.
Manufacturer
The RFD14N05LSM9A is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in high-performance energy-efficient solutions. The company provides a wide range of products, including power management, analog, and digital semiconductors, as well as sensors and connectivity solutions. ON Semiconductor serves various industries, including automotive, industrial, consumer electronics, and communication. The company focuses on sustainability and innovation, aiming to create technologies that promote energy efficiency and enhance performance in electronic devices.
Application
The RFD14N05LSM9A is an N-channel MOSFET primarily used in various applications including power management, DC-DC converters, motor control, and switching devices. Its low on-resistance and high-speed switching capabilities make it suitable for use in consumer electronics, automotive systems, and industrial automation. Additionally, it is often employed in power supplies, LED drivers, and battery management systems due to its efficiency and reliability.
Package
The RFD14N05LSM9A is packaged in a TO-220 form factor. This package type is commonly used for power transistors and includes features for heat dissipation and easy mounting on heatsinks.
