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RFMD2081
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FabricanteQorvoCity name (optional, probably does not need a translation)
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Peça do Fabricante #RFMD2081
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Ficha Técnica RFMD2081 DataSheet
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Especificações
| Atributo | Valor |
| Modulation Format | QAM, QPSK |
| Output Power | - 4 dBm |
| Technology | Si |
| Brand | Qorvo |
| Packaging | Reel |
| Product Type | Modulator / Demodulator |
| Subcategory | Wireless & RF Integrated Circuits |
| Supply Voltage - Max | 3.3 V |
| Supply Voltage - Min | 2.7 V |
| Package / Case | QFN-32 |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 85 C |
| Mounting Type | SMD/SMT |
| Operating Supply Voltage | 3.3 V |
| Type | Modulator |
| Maximum Frequency | 2.7 GHz |
| Minimum Frequency | 45 MHz |
| Current - Supply | 135 mA |
| Development Kit | DKMD2081 |
| Interface Type | 3-Wire Serial |
Visão Geral
Description
Key specifications of the RFMD2081 include low power consumption, excellent gain, and a high input linearity, making it suitable for enhancing signal reception while minimizing noise. The amplifier typically operates with a supply voltage of around 2.7V to 5V, and its design often incorporates internal biasing to simplify circuit implementation.
Engineered for high efficiency, the RFMD2081 is ideal for applications requiring reliable signal amplification, such as mobile devices, base stations, and other RF front-end systems. Overall, its performance characteristics make it a valuable component in modern wireless communication technologies.
Equivalent
Features
1. Low Noise Figure: Typically around 0.5 dB, enhancing sensitivity for weak signals.
2. High Gain: Offers a gain of approximately 20 dB, allowing for effective signal amplification.
3. Wide Frequency Range: Suitable for diverse applications, including GSM, CDMA, and WCDMA systems.
4. Single Supply Operation: Operates on a 2.7 to 5.5 V supply voltage, providing flexibility in power design.
5. Compact Package: Available in a small surface-mount package, facilitating integration into compact designs.
6. High Linearity: Designed to maintain performance under varying input power levels, critical for multi-channel systems.
7. Integrated Biasing: Simplifies circuit design by including built-in biasing features.
These characteristics make the RFMD2081 ideal for mobile communication devices, satellite systems, and other RF applications where low noise and high gain are essential.
Pinout
Pin Count and Functions:
1. Pin 1: VDD (Power Supply)
2. Pin 2: VBIAS (Bias Voltage)
3. Pin 3: RFIN (RF Input)
4. Pin 4: GND (Ground)
5. Pin 5: RFOUT (RF Output)
6. Pins 6-16: Various functionalities related to stability, gain control, and additional grounding.
The amplifier is designed for high linearity and efficiency, making it suitable for applications like Bluetooth, Wi-Fi, and other wireless communication standards. Always refer to the manufacturer's datasheet for detailed specifications and application notes.
Manufacturer
Founded in 1991, RFMD focused on developing RF solutions that enhance wireless communication performance. The company was known for its expertise in RF technology, producing amplifiers, switches, and other integrated circuit solutions critical for high-frequency applications.
In 2015, RFMD merged with TriQuint Semiconductor to form Qorvo, Inc., which continues to develop and deliver advanced RF solutions for a wide range of markets, including mobile, aerospace, defense, and IoT. Qorvo is recognized as a leader in RF technologies and continues the legacy established by RFMD in the wireless communications industry.
Application
1. Cellular Base Stations - Enhancing signal transmission for mobile networks.
2. Wi-Fi Equipment - Boosting performance in wireless networking devices.
3. Satellite Communication - Supporting high-frequency signal amplification.
4. DTV Transmitters - Improving signal range and clarity in digital television broadcasting.
5. Industrial and Scientific Applications - Facilitating various RF communication needs.
Its versatility in operating across different frequencies and environments makes it suitable for a wide range of RF applications.