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RUE003N02TL
+Lista de MateriaisMOSFET N-CH 20V 300MA EMT3
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FabricanteSemiconductor de Rohm
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Peça do Fabricante #RUE003N02TL
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Pacote SOT-23-3
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Em Estoque3506
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4V |
| Rds On(Max) @ Id Vgs | 1Ohm @ 300mA, 4V |
| Vgs(th)(Max) @ Id | 1V @ 1mA |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 25 pF @ 10 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | EMT3 |
Visão Geral
Description
"Introduction to RUE003N02TL" likely refers to an introductory overview or course related to a specific subject denoted by the code "RUE003N02TL." While the code itself doesn't provide explicit details about the content, such codes are typically used in academic or professional settings to identify courses, modules, or project titles uniquely.
An introduction to this course would generally cover the fundamental concepts, objectives, and outcomes expected from participants. It may outline the key topics to be covered, the structure of the course, and any prerequisites needed. It might also introduce the teaching methods, assessment criteria, and resources provided.
If RUE003N02TL is specific to a particular institution or program, consulting the syllabus or official materials from the provider would give more detailed information about what the introduction entails. This introduction serves to prepare participants for what they will learn and how they can apply the knowledge gained in practical or academic contexts.
An introduction to this course would generally cover the fundamental concepts, objectives, and outcomes expected from participants. It may outline the key topics to be covered, the structure of the course, and any prerequisites needed. It might also introduce the teaching methods, assessment criteria, and resources provided.
If RUE003N02TL is specific to a particular institution or program, consulting the syllabus or official materials from the provider would give more detailed information about what the introduction entails. This introduction serves to prepare participants for what they will learn and how they can apply the knowledge gained in practical or academic contexts.
Equivalent
The RUE003N02TL is a MOSFET designed for low voltage applications. Equivalent products would include similarly rated MOSFETs with comparable specifications, such as:
1. NXP's PSMN022-30PL
2. Vishay's SI2323DS
3. Infineon's BSS138
4. ON Semiconductor's NTD2955
These equivalents should be checked for specific parameters like voltage, current ratings, and package type to ensure compatibility. Always consult the manufacturer's datasheets for precise matching.
1. NXP's PSMN022-30PL
2. Vishay's SI2323DS
3. Infineon's BSS138
4. ON Semiconductor's NTD2955
These equivalents should be checked for specific parameters like voltage, current ratings, and package type to ensure compatibility. Always consult the manufacturer's datasheets for precise matching.
Features
The RUE003N02TL is an N-channel MOSFET commonly used in electronic circuits. Here are its key features:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The continuous drain current (I_D) can handle approximately 20A, allowing it to manage moderate power loads.
3. R_DS(on): The on-resistance is typically low, around 0.003 ohms, which ensures efficient operation with minimal power loss.
4. Package Type: It is available in a surface-mount package, which is suitable for compact circuit designs.
5. Fast Switching: The MOSFET features fast switching speeds, beneficial for high-frequency applications.
6. Thermal Performance: It offers good thermal performance, often with an enhanced power dissipation capability due to its package design.
7. Applications: It is commonly used in power management, DC-DC converters, and motor control applications.
These features make the RUE003N02TL a versatile component in various electronic designs, balancing performance and efficiency.
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The continuous drain current (I_D) can handle approximately 20A, allowing it to manage moderate power loads.
3. R_DS(on): The on-resistance is typically low, around 0.003 ohms, which ensures efficient operation with minimal power loss.
4. Package Type: It is available in a surface-mount package, which is suitable for compact circuit designs.
5. Fast Switching: The MOSFET features fast switching speeds, beneficial for high-frequency applications.
6. Thermal Performance: It offers good thermal performance, often with an enhanced power dissipation capability due to its package design.
7. Applications: It is commonly used in power management, DC-DC converters, and motor control applications.
These features make the RUE003N02TL a versatile component in various electronic designs, balancing performance and efficiency.
Pinout
The RUE003N02TL is an N-channel MOSFET. It typically comes in a standard SOT-23 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This is the terminal where the charge carriers enter the MOSFET. In N-channel MOSFETs, this is typically connected to ground or a lower potential in the circuit.
3. Drain (D): This is the terminal where the charge carriers exit the MOSFET. It is typically connected to the load or a higher potential.
In summary, the RUE003N02TL has a three-pin configuration that includes the gate, source, and drain, which are typical for MOSFETs to control electronic signals and power.
1. Gate (G): This pin is used to control the conductivity between the drain and source. Applying a voltage to the gate allows current to flow between the source and drain.
2. Source (S): This is the terminal where the charge carriers enter the MOSFET. In N-channel MOSFETs, this is typically connected to ground or a lower potential in the circuit.
3. Drain (D): This is the terminal where the charge carriers exit the MOSFET. It is typically connected to the load or a higher potential.
In summary, the RUE003N02TL has a three-pin configuration that includes the gate, source, and drain, which are typical for MOSFETs to control electronic signals and power.
Manufacturer
The RUE003N02TL is manufactured by ROHM Semiconductor. ROHM is a Japanese company that designs and manufactures a wide range of electronic components. Founded in 1958, ROHM's product line includes integrated circuits (ICs), diodes, transistors, resistors, and other semiconductor devices. The company caters to various industries, including automotive, consumer electronics, industrial equipment, and telecommunications. Known for its innovation and quality, ROHM focuses on developing advanced technologies to support cutting-edge applications.
Application
The RUE003N02TL is a N-channel MOSFET, commonly used in various electronic applications. Its primary application areas include power management systems, such as DC-DC converters, and switching power supplies due to its efficient power handling capabilities. It is also utilized in motor control circuits, where precise control and high efficiency are needed. Additionally, it can be found in load switch circuits and various consumer electronics, providing efficient switching and amplification functions. The MOSFET's compact design makes it suitable for portable and compact devices, enhancing battery life and performance.
Package
The package type for RUE003N02TL is typically a TO-252 (DPAK) surface-mount package. This type of package is commonly used for power transistors and other semiconductor devices, providing a compact and efficient design for heat dissipation and electronic performance.
