S29GL01GS11DHIV20

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S29GL01GS11DHIV20

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IC FLASH 1GBIT PARALLEL 64FBGA

  • FabricanteTecnologias Infineon

  • Peça do Fabricante #S29GL01GS11DHIV20

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Especificações

Atributo Valor
Series GL-S
Part Status Active
Base Product Number S29GL01
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 1.65V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (9x9)
Packaging Tray
Access Time 110 ns

Visão Geral

Description

The S29GL01GS11DHIV20 is a part of the GL-S family of flash memory products manufactured by Cypress Semiconductor, now a part of Infineon Technologies. This specific model is a NOR flash memory device, which is commonly used for storing firmware and other read-only data in electronic devices.
Key features of the S29GL01GS11DHIV20 include:
1. Density & Architecture: It offers a storage capacity of 1 Gigabit, making it suitable for applications requiring substantial data storage.

2. Interface: Utilizes a parallel interface for data transfer, which is typical for high-speed memory operations.
3. Performance: Known for fast read times and high reliability, characteristics inherent to NOR flash technology.
4. Endurance & Retention: It is designed for high endurance with a significant number of read/write cycles and data retention capabilities, ensuring long-term reliability.
5. Packaging: Available in various package types suitable for integration into different hardware designs.
This flash memory is ideal for embedded systems, automotive applications, and any scenario where reliable, non-volatile storage is essential.

Equivalent

The S29GL01GS11DHIV20 is a 1 Gb (Gigabit) NOR Flash memory chip from Cypress Semiconductor (now Infineon Technologies). Equivalent products from other manufacturers might include:
1. Micron MT28EW01GABA: A 1 Gb NOR Flash memory.
2. Intel 28F00AM29EW: A 1 Gb NOR Flash memory.
3. Winbond W29GL01GS: A 1 Gb NOR Flash memory.
These equivalents should offer similar features, though it's essential to verify specifications and compatibility.

Features

The S29GL01GS11DHIV20 is a flash memory device from Cypress Semiconductor, part of the GL-S family. It offers a storage capacity of 1 Gb (gigabit) and uses a parallel NOR flash architecture, which is known for fast read times and reliability. The device operates at a voltage range of 2.7 to 3.6 volts, making it suitable for a variety of applications requiring low power consumption.
Key features include:
1. Access Speed: Fast read access time of around 90 ns, supporting quick data retrieval.
2. Sector Architecture: Uniform 128 KB sectors, allowing for efficient memory management and data storage.
3. Security: Comes with hardware and software-based data protection mechanisms to prevent accidental erasure or overwriting.
4. Performance: Supports high-speed synchronous and asynchronous read operations.
5. Endurance and Reliability: Designed for high endurance, typically offering over 100,000 program/erase cycles per sector.
The S29GL01GS11DHIV20 is typically used in applications like automotive systems, embedded systems, and industrial equipment, where reliable data storage and quick access times are crucial.

Pinout

The S29GL01GS11DHIV20 is a 1 Gbit (128 Mbyte) GL-S NOR Flash memory device from Cypress Semiconductor (now part of Infineon Technologies). This device is organized in 8 bits and offers high-speed reading, programming, and erasing operations.
The pin count for this device is typically 56, which is common for its type of packaging (TSOP or BGA configurations). The main functions of the pins can be categorized as follows:
1. Address Pins (A0-Axx): These are used to select the memory location for reading or writing data.
2. Data Pins (DQ0-DQ15): These serve as the data bus for inputting and outputting data.
3. Chip Enable (CE#): This pin enables the device, allowing it to be selected for operation.
4. Write Enable (WE#): This pin controls the write operations.
5. Output Enable (OE#): This pin enables data to be output from the device.
6. Reset (RESET#): This pin is used to reset the device.
7. VCC and VSS: Power supply and ground pins for the operation of the device.
Refer to the specific datasheet for detailed pin configurations and electrical characteristics.

Manufacturer

The S29GL01GS11DHIV20 is a flash memory chip manufactured by Cypress Semiconductor Corporation. Cypress Semiconductor is a company known for designing and manufacturing a broad range of semiconductor products, including NOR flash memories, microcontrollers, and wireless connectivity solutions. In 2020, Cypress Semiconductor was acquired by Infineon Technologies AG, a German semiconductor manufacturer. Infineon is a global leader in semiconductor solutions, focusing on automotive, industrial power control, power management, and digital security markets.

Application

The S29GL01GS11DHIV20 is a 1 Gb (gigabit) NOR Flash memory device. It is typically used in applications requiring high-density memory with reliable performance. Key application areas include:
1. Automotive Systems: Used in infotainment systems, digital dashboards, and advanced driver-assistance systems (ADAS).
2. Industrial Automation: Supports complex programmable logic controllers (PLCs) and industrial IoT devices.
3. Consumer Electronics: Powers firmware storage in smartphones, tablets, and smart TVs.
4. Networking Equipment: Utilized in routers, switches, and other communication devices.
5. Medical Devices: Provides reliable storage for critical data in diagnostic equipment.
These applications benefit from the NOR flash's fast read speeds and robust data retention.

Package

The S29GL01GS11DHIV20 is a flash memory chip from Cypress Semiconductor. It typically comes in a BGA (Ball Grid Array) package type, specifically designed for high-density memory applications. The BGA package provides efficient thermal performance and is suitable for compact electronic devices requiring robust memory solutions.

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