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S29GL128P90TFIR20
+Lista de MateriaisIC FLASH 128MBIT PARALLEL 56TSOP
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FabricanteCypress Semiconductor Corp
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Peça do Fabricante #S29GL128P90TFIR20
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Ficha Técnica S29GL128P90TFIR20 DataSheet
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Pacote TSOP-56
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Especificações
| Atributo | Valor |
| Package / Case | Bulk,Tray |
| Series | GL-P |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mb (16M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 90ns |
| Access Time | 90 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
The memory is organized into sectors, allowing for flexible data management and storage. It supports a wide range of operations such as read, program, and erase cycles, with an endurance of up to 100,000 cycles, ensuring long-term durability. Its packaging, in a 64-ball Fine-pitch Ball Grid Array (FBGA), is designed for space-efficient integration into electronic devices. Commonly used in automotive, networking, and industrial applications, the S29GL128P90TFIR20 is valued for its balance of performance, capacity, and power efficiency.
Equivalent
1. Micron MT28F128J3 - 128 Mb NOR Flash.
2. Winbond W29GL128 - 128 Mb NOR Flash.
3. Spansion S29AL016J - 128 Mb NOR Flash.
4. Macronix MX29LV128 - 128 Mb NOR Flash.
When selecting an equivalent, ensure compatibility in voltage, package, and pin configuration. Always verify current availability and specifications with the manufacturer.
Features
1. Density and Architecture: 128 Mb organized as 16M x 8 or 8M x 16.
2. Voltage: Operates at a single 3.0-Volt power supply for read, erase, and program operations.
3. Access Time: 90 ns for fast read operations.
4. Memory Blocks: Uniform 64-KB sector architecture, which aids in efficient memory management and flexibility.
5. Programming: Supports both Sector Erase and Chip Erase operations.
6. Security: Features a SecSi™ (Security Sector) with a factory locked area for secure code storage.
7. Durability: Offers a high endurance of 1,000,000 program/erase cycles per sector.
8. Data Retention: Guarantees a data retention period of 20 years.
9. Package: Available in a 56-pin TSOP package.
10. Additional Features: Includes Suspend and Resume functions for program and erase operations and a Ready/Busy# pin to indicate operation status.
These characteristics make the S29GL128P90TFIR20 suitable for a wide range of applications, including embedded systems and consumer electronics.
Pinout
Key functions of the pins include:
- Address Pins (A0-A22): These are used to specify the memory address locations for read or write operations.
- Data Pins (DQ0-DQ15): These provide the data bus for inputting and outputting data to/from the device.
- Control Pins: Including Chip Enable (CE#), Output Enable (OE#), and Write Enable (WE#), which control the device's operation modes.
- Power Pins: VCC and VSS provide power and ground connections.
- Other Pins: Such as RESET# for device reset, and WP# for write protection.
The device's architecture and pin functions support operations like sector erasure, byte/word programming, and read operations, with a focus on high performance and reliability.