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S34ML01G100TFI000
+Lista de MateriaisIC FLASH 1GBIT PARALLEL 48TSOP I
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FabricanteCypress Semiconductor Corp
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Peça do Fabricante #S34ML01G100TFI000
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Pacote TSOP-48
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Em Estoque6055
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Especificações
| Atributo | Valor |
| Package / Case | Tray,Tray |
| Series | ML-1 |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 25ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Visão Geral
Description
Key features of the S34ML01G100TFI000 include its 1Gb (gigabit) storage capacity, operating in a single-level cell (SLC) architecture that enhances performance and endurance. The chip operates within an industrial temperature range of -40°C to 85°C, making it suitable for a variety of demanding environments. It uses a parallel interface for data transfer, enabling fast read and write operations.
This NAND flash memory is commonly used in embedded systems, consumer electronics, and industrial applications where reliable, high-speed data storage is essential. Its compact design and robust performance make it an attractive choice for designers looking to integrate efficient memory solutions into their products.
Equivalent
1. MT29F1G08ABADAWP-IT from Micron
2. K9F1G08U0F-PIB0T from Samsung
3. TH58NVG1S3HTA00 from Toshiba (now Kioxia)
4. W29N01GV from Winbond
These are similar in terms of capacity and functionality, but always check specific datasheets for pin compatibility and other detailed specifications.
Features
1. Memory Size: It offers a storage capacity of 1 gigabit.
2. Architecture: Utilizes single-level cell (SLC) technology, which provides high reliability and endurance compared to multi-level architectures.
3. Package Type: It comes in a TSOP (Thin Small Outline Package), which is commonly used for surface mounting on circuit boards.
4. Interface: Supports a parallel NAND interface, which is typical for NAND flash memory devices.
5. Temperature Range: Designed to operate effectively within an industrial temperature range, typically -40°C to 85°C, making it suitable for challenging environments.
6. Voltage: Operates at a supply voltage range of 3.3V.
7. Endurance: Offers high cycle endurance, which is a critical factor for applications requiring frequent writes and erasures.
8. Data Retention: Capable of retaining data for extended periods, often up to 10 years under specified conditions.
These features make it suitable for various applications, including industrial, automotive, and consumer electronics, where reliability and durability are essential.
Pinout
Key functions and characteristics include:
1. Data Storage: Provides high-density storage solutions with non-volatile memory, meaning it retains data without power.
2. Single-Level Cell (SLC) Technology: Offers higher endurance and reliability compared to multi-level cell (MLC) flash due to its simpler storage mechanism, storing one bit per cell.
3. Interfaces: Supports standard NAND interface for easy integration into systems.
4. Performance: Provides fast read and write operations suitable for applications requiring quick data access.
5. Endurance and Reliability: Typically exhibits high endurance with a robust number of program/erase cycles, making it suitable for industrial and other demanding environments.
For detailed technical specifications, it is recommended to consult the manufacturer's datasheet.
Manufacturer
Application
1. Consumer Electronics: Used in devices like digital cameras, smartphones, and tablets for data storage and firmware updates.
2. Industrial Systems: Employed for reliable data storage in harsh environments, such as in automation and control systems.
3. Networking Equipment: Utilized in routers and switches for storing configuration data and system logs.
4. Automotive: Used for data storage in infotainment systems and advanced driver-assistance systems (ADAS).
5. Embedded Systems: Provides storage solutions for a variety of embedded applications requiring robust, non-volatile memory.