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SCTW100N65G2AG
+Lista de MateriaisSICFET N-CH 650V 100A HIP247
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FabricanteSTMicroeletrônica
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Peça do Fabricante #SCTW100N65G2AG
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Ficha Técnica SCTW100N65G2AG DataSheet
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 18V |
| RdsOn(Max)@IdVgs | 26mOhm @ 50A, 18V |
| Vgs(th)(Max)@Id | 5V @ 5mA |
| GateCharge(Qg)(Max)@Vgs | 162 nC @ 18 V |
| Vgs(Max) | +22V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 3315 pF @ 520 V |
| PowerDissipation(Max) | 420W (Tc) |
| OperatingTemperature | -55°C ~ 200°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | HiP247™ |
Visão Geral
Description
The SCTW100N65G2AG is a silicon carbide (SiC) power MOSFET developed by STMicroelectronics. It's part of the company's advanced power semiconductor solutions designed to improve efficiency and performance in power conversion applications. This MOSFET is notable for its high voltage rating of 650V and low on-resistance, which enhances its efficiency, particularly in high-frequency switching applications.
Key features of the SCTW100N65G2AG include fast switching capabilities, robustness, and high thermal conductivity, which contribute to reduced energy losses and improved thermal management. These properties make it suitable for use in demanding applications such as electric vehicles, renewable energy systems, and industrial power supplies.
SiC technology in the SCTW100N65G2AG offers significant advantages over traditional silicon-based semiconductors, including smaller size, lighter weight, and greater efficiency. This makes it an excellent choice for designers aiming to achieve compact, energy-efficient power systems. The component is also RoHS-compliant, aligning with environmental and regulatory standards.
Key features of the SCTW100N65G2AG include fast switching capabilities, robustness, and high thermal conductivity, which contribute to reduced energy losses and improved thermal management. These properties make it suitable for use in demanding applications such as electric vehicles, renewable energy systems, and industrial power supplies.
SiC technology in the SCTW100N65G2AG offers significant advantages over traditional silicon-based semiconductors, including smaller size, lighter weight, and greater efficiency. This makes it an excellent choice for designers aiming to achieve compact, energy-efficient power systems. The component is also RoHS-compliant, aligning with environmental and regulatory standards.
Equivalent
The SCTW100N65G2AG is a silicon carbide (SiC) power MOSFET. Equivalent products include:
1. C3M0065100K from Wolfspeed
2. SPW47N60C3 from Infineon
3. APT65GR120B2 from Microsemi
4. GS66508T from GaN Systems (if considering GaN alternatives)
These products have similar voltage and current ratings, but always verify specific parameters and application compatibility before substituting components.
1. C3M0065100K from Wolfspeed
2. SPW47N60C3 from Infineon
3. APT65GR120B2 from Microsemi
4. GS66508T from GaN Systems (if considering GaN alternatives)
These products have similar voltage and current ratings, but always verify specific parameters and application compatibility before substituting components.
Features
The SCTW100N65G2AG is a silicon carbide (SiC) power MOSFET designed for high-efficiency applications. Key features include:
1. Voltage and Current Ratings: It has a 650V drain-source voltage and a continuous drain current rating, typically suitable for high-power applications.
2. Low On-Resistance: The SiC technology provides a low on-resistance, which reduces conduction losses and enhances efficiency.
3. High-Speed Switching: The device supports high-frequency operations, improving efficiency in switching applications.
4. Thermal Performance: It offers excellent thermal performance, allowing it to operate effectively at higher temperatures compared to silicon-based MOSFETs.
5. Rugged Design: The MOSFET is designed to withstand harsh operating conditions, making it suitable for demanding environments.
6. Package: It is available in industry-standard packages, facilitating easy integration into existing designs.
These features make the SCTW100N65G2AG ideal for applications such as power supplies, motor drives, and renewable energy systems, where efficiency and robustness are critical.
1. Voltage and Current Ratings: It has a 650V drain-source voltage and a continuous drain current rating, typically suitable for high-power applications.
2. Low On-Resistance: The SiC technology provides a low on-resistance, which reduces conduction losses and enhances efficiency.
3. High-Speed Switching: The device supports high-frequency operations, improving efficiency in switching applications.
4. Thermal Performance: It offers excellent thermal performance, allowing it to operate effectively at higher temperatures compared to silicon-based MOSFETs.
5. Rugged Design: The MOSFET is designed to withstand harsh operating conditions, making it suitable for demanding environments.
6. Package: It is available in industry-standard packages, facilitating easy integration into existing designs.
These features make the SCTW100N65G2AG ideal for applications such as power supplies, motor drives, and renewable energy systems, where efficiency and robustness are critical.
Pinout
The SCTW100N65G2AG is a silicon carbide (SiC) power MOSFET produced by STMicroelectronics. It typically comes in a TO-247 package, which has 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is in the 'on' state. It's connected to the load in most circuit configurations.
3. Source (S): This is the terminal that acts as the return path for the current flowing through the MOSFET. It is typically connected to ground in many applications.
The SCTW100N65G2AG is designed for high-efficiency power switching applications, offering benefits like low on-resistance and fast switching capabilities, suitable for applications like power supplies, motor drives, and inverters.
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D): The drain is the terminal through which the main current flows from the source when the MOSFET is in the 'on' state. It's connected to the load in most circuit configurations.
3. Source (S): This is the terminal that acts as the return path for the current flowing through the MOSFET. It is typically connected to ground in many applications.
The SCTW100N65G2AG is designed for high-efficiency power switching applications, offering benefits like low on-resistance and fast switching capabilities, suitable for applications like power supplies, motor drives, and inverters.
Manufacturer
The SCTW100N65G2AG is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. They provide solutions for microelectronics applications, including smart driving, the Internet of Things (IoT), and other industrial applications. The company is known for its innovation in semiconductors, offering a wide variety of products such as microcontrollers, sensors, power management components, and automotive-grade chips. STMicroelectronics operates in a highly competitive industry and serves a diverse array of markets worldwide.
Application
The SCTW100N65G2AG is a silicon carbide (SiC) MOSFET that is used in several high-performance applications due to its efficiency and high thermal conductivity. Key application areas include:
1. Power Supplies: Used in switched-mode power supplies (SMPS) for improved efficiency and reduced losses.
2. Renewable Energy: Integral in solar inverters and wind turbine converters to enhance energy conversion efficiency.
3. Electric Vehicles: Utilized in inverters and chargers for electric and hybrid vehicles due to its fast switching and high temperature capabilities.
4. Industrial Applications: Employed in motor drives and industrial power converters for higher power density and improved performance.
These applications leverage the MOSFET's high voltage rating and efficiency characteristics.
1. Power Supplies: Used in switched-mode power supplies (SMPS) for improved efficiency and reduced losses.
2. Renewable Energy: Integral in solar inverters and wind turbine converters to enhance energy conversion efficiency.
3. Electric Vehicles: Utilized in inverters and chargers for electric and hybrid vehicles due to its fast switching and high temperature capabilities.
4. Industrial Applications: Employed in motor drives and industrial power converters for higher power density and improved performance.
These applications leverage the MOSFET's high voltage rating and efficiency characteristics.
Package
The SCTW100N65G2AG is an automotive-grade silicon carbide power MOSFET. It is typically housed in a TO-247 package, which is a standard discrete semiconductor package designed for high-power applications.
