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SI1062X-T1-GE3
+Lista de MateriaisMOSFET N-CH 20V SC89-3
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FabricanteVishay Siliconix
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Peça do Fabricante #SI1062X-T1-GE3
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Ficha Técnica SI1062X-T1-GE3 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 530mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.5V, 4.5V |
| RdsOn(Max)@IdVgs | 420mOhm @ 500mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 2.7 nC @ 8 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 43 pF @ 10 V |
| PowerDissipation(Max) | 220mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SC-89-3 |
Visão Geral
Description
This introduction would typically cover the basics of the subject matter, starting with the fundamental concepts or technologies denoted by "SI1062X-T1-GE3." This could involve a specific software tool, a hardware component, or a specialized industrial process, depending on the field (such as engineering, IT, or electronics).
Key components of the introduction might include:
1. Overview of the system or technology's purpose and applications.
2. Explanation of its key features and functions.
3. Introduction to relevant technical terminology.
4. A brief history or development background, if applicable.
5. Outline of potential use cases or industry applications.
6. Safety, compliance, or operational guidelines, if relevant.
This introduction sets the stage for deeper exploration in subsequent modules or detailed study sessions, equipping learners with the foundational knowledge needed to understand and utilize SI1062X-T1-GE3 effectively. For precise details, refer to specific course materials or documentation related to SI1062X-T1-GE3.
Equivalent
Features
Key features include:
1. Fast Switching Speed: Enhances performance in high-frequency applications.
2. Low Forward Voltage Drop: Ensures efficient operation with minimal power loss.
3. High Surge Capability: Offers protection against voltage spikes and surges, enhancing reliability.
4. Small Form Factor: The SOD-123 package allows for compact layouts and efficient board space usage.
5. Wide Operating Temperature Range: Ensures reliability across various environmental conditions.
These features make the SI1062X-T1-GE3 a versatile choice for applications requiring efficient, reliable, and compact diode solutions.
Pinout
The primary function of the SI1062X-T1-GE3 is to provide efficient rectification in various power applications. Schottky diodes are known for their low forward voltage drop and fast switching speed, which make them suitable for use in high-frequency and low-voltage applications. They are commonly used in power supply circuits, voltage clamping, and reverse current protection.
For precise details, such as the exact pin count and package type, it is recommended to consult the datasheet provided by Vishay for the SI1062X-T1-GE3, as this will offer specific technical specifications and pin configuration diagrams.