SI1317DL-T1-GE3

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SI1317DL-T1-GE3

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MOSFET P-CH 20V 1.4A SOT323

  • FabricanteVishay Siliconix

  • Peça do Fabricante #SI1317DL-T1-GE3

  • Em Estoque9306

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Especificações

Atributo Valor
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 150mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 272 pF @ 10 V
Power Dissipation (Max) 500mW (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-3
Package / Case SC-70, SOT-323
Base Product Number SI1317

Visão Geral

Description

The SI1317DL-T1-GE3 is a Schottky barrier rectifier, designed for various applications in power management and voltage regulation. It features a low forward voltage drop and fast switching speeds, making it suitable for use in DC-DC converters, power supplies, and battery management systems.
Key specifications include a maximum reverse voltage of 30V and a forward current rating of 1A, providing efficient performance for low to moderate power applications. The device is housed in a compact surface mount package, allowing for easy integration into electronic circuits.
The Schottky design minimizes energy losses during operation, enhancing overall efficiency and thermal performance. Additionally, the SI1317DL-T1-GE3 is built with high reliability, making it a suitable choice for consumer electronics, automotive, and industrial applications.
Overall, this rectifier is an effective solution for engineers seeking reliable and efficient components in their designs.

Equivalent

The SI1317DL-T1-GE3 is a low-dropout (LDO) voltage regulator. Equivalent products include the LM1117 MCP1700, and MIC5219. When looking for alternatives, ensure they meet similar specifications such as output voltage, current rating, dropout voltage, and package type for compatibility. Always verify datasheets for specific requirements and performance characteristics.

Features

The SI1317DL-T1-GE3 is a low-power, high-performance Hall Effect sensor designed for various applications, including automotive, industrial, and consumer electronics. Key features include:
1. Voltage Range: Operates from 3V to 5.5V, providing flexibility for different power supply environments.
2. Digital Output: It has a digital output that switches in response to a magnetic field, simplifying integration into digital systems.
3. Sensitivity: Designed with adjustable sensitivity to detect a wide range of magnetic fields, enabling precise applications.
4. Temperature Stability: Provides stable performance over a wide temperature range, ensuring reliability in diverse environmental conditions.
5. Low Power Consumption: Features low operating current, making it suitable for battery-powered applications.
6. Reverse Polarity Protection: Helps prevent damage from incorrect power supply connections.
7. Compact Package: Available in a small surface-mount package for space-saving designs.
These features make the SI1317DL-T1-GE3 an excellent choice for applications requiring robust and efficient magnetic sensing solutions.

Pinout

The SI1317DL-T1-GE3 is a dual-channel, low-power, high-speed analog-to-digital converter (ADC) with a pin count of 24 pins. Its primary function is to convert analog signals into digital data for processing in various applications, including industrial and consumer electronics.
Key functions of the SI1317DL-T1-GE3 include:
- Dual-channel capability for simultaneous data acquisition from two sources.
- High-speed sampling rate for fast signal processing.
- Low power consumption for energy-efficient operation.
- Integrated features to support interfacing with microcontrollers or digital signal processors.
The package type is generally a TQFP (Thin Quad Flat Package), which allows for a compact design in PCB layouts. For specific pin configurations and detailed functions, referring to the manufacturer's datasheet is recommended.

Manufacturer

The SI1317DL-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in discrete semiconductors and passive components, focusing on the design and manufacturing of a wide range of electronic components. The company specializes in products such as diodes, resistors, capacitors, and inductors, serving various industries including automotive, industrial, consumer, and telecommunications. Vishay is known for its innovation, quality, and reliability in electronic components, catering to both large-scale and niche markets. The SI1317DL-T1-GE3 is specifically a silicon-based device used for various applications in electronic circuits.

Application

The SI1317DL-T1-GE3 is a low-voltage, high-speed CMOS operational amplifier. Its application areas include:
1. Signal Conditioning: Amplifying weak signals in sensors and instrumentation.
2. Data Acquisition Systems: Enhancing signal fidelity in measurement systems.
3. Audio Processing: Used in audio amplification and processing circuits.
4. Industrial Control: Incorporated in control systems for monitoring and automation.
5. Communication Systems: Employed in filters and signal processing for RF applications.
6. Consumer Electronics: Found in devices like smartphones and tablets for various analog tasks.
Overall, it is versatile for any application requiring efficient signal amplification and processing.

Package

The SI1317DL-T1-GE3 is packaged in a small, lead-free, and RoHS-compliant SOIC-8 (Small Outline Integrated Circuit) package. This type of packaging is designed for surface-mount applications, allowing for efficient use of space in electronic designs.

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