SI1539CDL-T1-GE3

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SI1539CDL-T1-GE3

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MOSFET N/P-CH 30V 0.7A SC70-6

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Especificações

Atributo Valor
Series TrenchFET®
Part Status Active
Base Product Number SI1539
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 700mA, 500mA
Rds On (Max) @ Id, Vgs 388mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 28pF @ 15V
Power - Max 340mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
Packaging Cut Tape (CT), Tape & Reel (TR)

Visão Geral

Description

The SI1539CDL-T1-GE3 is a specific model of semiconductor component, likely a type of surface-mount device used in electronic circuits. While detailed specifics about this model are not readily available in standard databases, components like these generally play roles such as diodes, transistors, or integrated circuits in electronics design. They are used for switching, amplification, rectification, or voltage regulation within a circuit.
The naming convention suggests it belongs to a series of similar components, with "SI" possibly indicating the manufacturer or series name. "1539" might refer to a model or version number, while "CDL-T1-GE3" could denote package type, electrical characteristics, or manufacturing revision.
If you are dealing with this component, it's essential to consult the manufacturer's datasheet for precise technical specifications and applications. The datasheet will provide information on electrical characteristics, pin configuration, thermal performance, and recommended usage, ensuring the component is correctly integrated into your electronic project.

Equivalent

The SI1539CDL-T1-GE3 is a dual N-channel MOSFET. Equivalent products often include similar dual N-channel MOSFETs from other manufacturers. Some possible equivalents are:
1. BSS138DW from ON Semiconductor.
2. DMN2400LDW from Diodes Incorporated.
3. FDS9934C from ON Semiconductor.
4. 2N7002DW from Fairchild Semiconductor, now part of ON Semiconductor.
Always verify the electrical specifications and pin configurations to ensure compatibility with your application.

Features

The SI1539CDL-T1-GE3 is a dual N-channel MOSFET. Key features include:
1. N-Channel MOSFETs: Designed for high-efficiency power management and switching applications.
2. Low On-Resistance: Features a low RDS(on), ideal for reducing power loss and improving efficiency in circuits.
3. Compact Package: Comes in a small SOT-23 package, making it suitable for space-constrained applications.
4. Fast Switching: Capable of high-speed switching, which is beneficial for applications requiring rapid on-off cycles.
5. Temperature Performance: Operates effectively over a broad range of temperatures, enhancing its reliability in various environments.
6. Voltage and Current Ratings: Suitable for low to medium power applications given its specific voltage and current rating which should be checked in the datasheet for precise values.
7. Application Versatility: Ideal for use in DC-DC converters, load switch circuits, and other power management systems.
These features make the SI1539CDL-T1-GE3 a versatile choice for designers looking to implement efficient switching in compact electronic designs.

Pinout

The SI1539CDL-T1-GE3 is a dual n-channel MOSFET transistor from Vishay Siliconix. It typically comes in a small SOT-363 package, which is a 6-pin configuration. Here's a concise overview of its pin functions:
1. Drain1 (D1): This pin is the drain for the first MOSFET.
2. Gate1 (G1): This pin is the gate for the first MOSFET.
3. Source1 (S1): This pin is the source for the first MOSFET.
4. Drain2 (D2): This pin is the drain for the second MOSFET.
5. Gate2 (G2): This pin is the gate for the second MOSFET.
6. Source2 (S2): This pin is the source for the second MOSFET.
The dual n-channel MOSFET configuration allows for separate control of two channels, making it suitable for various switching and amplification applications. For precise electrical specifications, refer to the official datasheet.

Manufacturer

The SI1539CDL-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the design, manufacture, and supply of electronic components. Founded in 1962 and headquartered in Malvern, Pennsylvania, Vishay is one of the world's largest manufacturers of discrete semiconductors and passive electronic components. The company's product portfolio includes diodes, MOSFETs, optoelectronics, and a variety of passive components such as resistors, inductors, and capacitors. Vishay’s components are used in a broad range of industries, including automotive, industrial, consumer, computing, telecommunications, and healthcare. The company is known for its innovation and quality, focusing on providing solutions that enhance the performance and reliability of electronic devices and systems.

Application

The SI1539CDL-T1-GE3 is a dual N-channel MOSFET, commonly used in power management applications. Its main application areas include:
1. DC-DC Converters: Efficiently converts power in electronic devices.
2. Load Switching: Controls power supply to various components.
3. Motor Drives: Used in low to medium power motor control systems.
4. Battery Management: In battery-powered devices for protection and power optimization.
5. LED Drivers: Regulates power supply to LEDs in lighting systems.
Its compact size and efficiency make it suitable for portable and space-constrained applications.

Package

The SI1539CDL-T1-GE3 is a surface-mount device (SMD) that uses a small outline, flat-lead package, typically utilized in semiconductor components for efficient thermal performance and space-saving designs.

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