SI2301CDS-T1-GE3

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SI2301CDS-T1-GE3

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MOSFET P-CH 20V 3.1A SOT23-3

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Especificações

Atributo Valor
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3.1A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 112mOhm @ 2.8A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 10 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 405 pF @ 10 V
PowerDissipation(Max) 860mW (Ta), 1.6W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Visão Geral

Equivalent

Equivalent products to the SI2301CDS-T1-GE3 (P-channel MOSFET, 20V, 3.1A, SOT-23) include:
- AO3401 (AOS)
- DMG2305UX (Diodes Inc.)
- IRLML6401 (Infineon)
- FDC633P (Fairchild/ON Semi)
These are similar P-channel MOSFETs with comparable voltage, current, and package (SOT-23). Verify specs for exact suitability.

Features

The SI2301CDS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-Source, VDS)
- Current Rating: -3.7A (Continuous Drain, ID)
- Low On-Resistance: 60mΩ (max @ VGS = -4.5V)
- Gate Threshold: -0.7V (typical)
- Fast Switching: Low gate charge (Qg ~ 6.5nC)
- Small Package: SOT-23 (3-pin), compact & space-saving
- Low Power Loss: Optimized for efficiency in power management
- Applications: Load switching, power management, battery protection
Ideal for portable electronics, power supplies, and low-voltage DC-DC converters.

Application

The SI2301CDS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching, and DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Signal Switching – Low-power signal routing in audio and communication circuits.
4. Consumer Electronics – Power control in smartphones, tablets, and wearables.
5. Automotive Systems – Auxiliary power control and LED drivers.
Its compact SOT-23 package and low on-resistance make it ideal for space-constrained, efficient applications.

Package

The SI2301CDS-T1-GE3 is a MOSFET in a SOT-23-3 surface-mount package. This compact, 3-pin package is widely used for low-power applications, offering efficient space utilization on PCBs. It is suitable for automated assembly processes due to its small size and standardized footprint.

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