Imagens apenas para referência
SI2302CDS-T1-GE3
+Lista de MateriaisMOSFET N-CH 20V 2.6A SOT23-3
-
FabricanteVishay Siliconix
-
Peça do Fabricante #SI2302CDS-T1-GE3
-
Ficha Técnica SI2302CDS-T1-GE3 DataSheet
-
Pacote SOT-23-3
-
Em Estoque2481
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 2.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 57mOhm @ 3.6A, 4.5V |
| Vgs(th)(Max)@Id | 850mV @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| PowerDissipation(Max) | 710mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Visão Geral
Description
Key elements that might be covered include:
1. Basic Concepts: Fundamental principles and terminology relevant to the course subject.
2. Tools and Techniques: Introduction to essential tools, software, or methodologies used within the discipline.
3. Practical Applications: Real-world applications to illustrate how theoretical knowledge is applied.
4. Project Work: Hands-on projects or labs to enhance learning through practical experience.
5. Assessment: Evaluation through quizzes, assignments, or exams to gauge understanding.
For exact details, check the course syllabus or contact the institution offering the course.
Equivalent
1. 2N7002 A similar N-channel MOSFET from various manufacturers.
2. PMV16UN: An N-channel MOSFET from NXP.
3. BSS138A commonly used N-channel MOSFET from ON Semiconductor or Fairchild.
4. IRLML6344: An N-channel MOSFET from Infineon.
5. DMN2990UFDB: An N-channel MOSFET from Diodes Incorporated.
Always verify the electrical characteristics and package compatibility when selecting an alternative.
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of around 20V and a continuous drain current (I_D) of approximately 2.8A.
2. Low On-Resistance: The device is designed with a low on-resistance, which is usually around 0.075 ohms. This ensures efficient operation with minimal power loss.
3. Package Type: It is commonly available in a small SOT-23 package, making it suitable for space-constrained applications.
4. Threshold Voltage: The gate-source threshold voltage (V_GS(th)) generally ranges between 0.8V to 1.2V, allowing it to be driven with standard logic levels.
5. Fast Switching: The device supports fast switching speeds, which is beneficial for high-frequency applications.
6. Applications: It is widely used in power management applications, including DC-DC converters and load switching in portable devices.
These attributes make the SI2302CDS-T1-GE3 suitable for various electronic applications requiring efficient power management and space-saving designs.
Pinout
- Pin Count: It is typically available in a standard SOT-23 package, which has 3 pins.
- Pin Functions:
1. Gate (G): Used to control the MOSFET's conduction state.
2. Drain (D): The terminal where the load current enters the MOSFET.
3. Source (S): The terminal through which the load current exits the MOSFET.
The SI2302CDS-T1-GE3 is a P-channel MOSFET and is commonly used for applications that require a low voltage drop and high switching speed. It is utilized in a wide range of applications, including power management in portable devices, DC-DC converters, and load switches.