SI2308BDS-T1-GE3

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SI2308BDS-T1-GE3

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MOSFET N-CH 60V 2.3A SOT23-3

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Especificações

Atributo Valor
Series TrenchFET®
PartStatus Obsolete
BaseProductNumber SI2308
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 2.3A (Tc)
DriveVoltage(MaxRdsOn,MinRdsOn) 4.5V, 10V
RdsOn(Max)@Id,Vgs 156mOhm @ 1.9A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 6.8 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 190 pF @ 30 V
PowerDissipation(Max) 1.09W (Ta), 1.66W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Visão Geral

Description

"Introduction to SI2308BDS-T1-GE3" likely refers to a course or module code, possibly from an academic curriculum related to data science, business, or a similar field. While the exact details of the course are not specified, here's a general overview of what such a course might cover:
The course might aim to introduce students to fundamental concepts in data science and business analytics, focusing on data-driven decision-making in a business context. Key topics could include data collection, cleaning, and visualization, as well as statistical analysis and predictive modeling techniques. Students might learn to use software tools like Python, R, or SQL for data manipulation and analysis.
The course may also cover the ethical considerations and best practices in handling and interpreting data. Through practical exercises and projects, students would gain hands-on experience in applying these concepts to real-world business problems. This foundational knowledge would prepare students for more advanced topics in data science and analytics.
For precise details, check the specific syllabus or course description from the academic institution offering it.

Equivalent

The SI2308BDS-T1-GE3 is a MOSFET, specifically an N-channel MOSFET commonly used for switching applications. Equivalent products would include MOSFETs with similar voltage, current ratings, and package type. Some equivalents could be the IRLML6344TRPBF or BSS138. When looking for equivalents, ensure they meet the same specifications such as Vds, Id, Rds(on), and package type to ensure compatibility in your application. Always verify with the datasheet to ensure full compatibility.

Features

The SI2308BDS-T1-GE3 is a N-channel MOSFET that offers several notable features. It is designed for efficient power management and switching applications. Key features include:
1. Low On-Resistance: The device has a low on-resistance, which enhances its efficiency by reducing power loss during operation.
2. High-Speed Switching: It supports fast switching speeds, making it suitable for applications that require quick response times.
3. Compact Package: Typically available in a small SOT-23 package, the MOSFET is ideal for space-constrained applications.
4. Thermal Performance: It is designed to handle thermal conditions efficiently, which allows for reliable operation even in demanding environments.
5. Voltage and Current Ratings: Suitable for low to medium power applications, offering a balance of voltage and current handling capabilities.
6. Applications: Commonly used in battery management, DC-DC converters, load switches, and other consumer electronics.
These features make the SI2308BDS-T1-GE3 a versatile choice for designers seeking efficient and compact power management solutions.

Manufacturer

The SI2308BDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products including diodes, MOSFETs, resistors, capacitors, inductors, sensors, and optoelectronics, which are used in various industries such as automotive, industrial, computing, consumer, telecommunications, and medical. Vishay is known for its innovation and quality in semiconductor and electronic components, supporting the design and production needs of its customers worldwide.

Application

The SI2308BDS-T1-GE3 is a MOSFET transistor designed for a variety of applications. It is commonly used in power management systems due to its efficiency in switching and amplification. Specific application areas include DC-DC converters, load switch applications, motor drives, and battery management systems. Its compact form factor also makes it suitable for portable electronics, consumer electronics, and computing devices. The device's robust performance in handling low to medium power loads makes it versatile for both industrial and consumer products.

Package

The SI2308BDS-T1-GE3 is a surface-mount, dual MOSFET packaged in a PowerPAK SC-70 package. This package type is designed for compact and efficient thermal performance, ideal for use in portable and space-constrained electronic applications.

Frequently Asked Questions


Q: What is the maximum drain-source voltage for the SI2308BDS-T1-GE3?
A: The maximum drain-source voltage (Vdss) is 60 V, making it suitable for low to medium voltage applications.


Q: What is the continuous drain current rating at 25°C?
A: The continuous drain current (Id) is rated at 2.3A (Tc) at 25°C, ideal for moderate power loads.


Q: What is the typical Rds(on) value for this N-Channel MOSFET?
A: The maximum Rds(on) is 156 mOhm at Vgs = 10V and Id = 1.9A, ensuring efficient low-voltage switching.


Q: What is the recommended drive voltage range for minimizing conduction losses?
A: The drive voltage range is 4.5V to 10V, with 10V achieving the lowest Rds(on) for optimal performance.


Q: Can this device handle high-speed switching applications?
A: Yes, with a gate charge (Qg) of only 6.8 nC at Vgs = 10V, it supports fast switching and low gate drive losses.


Q: What is the maximum power dissipation capability?
A: The maximum power dissipation is 1.09W (Ta) and 1.66W (Tc), suitable for compact SOT-23-3 designs.


Q: Does the MOSFET include protection against electrostatic discharge (ESD)?
A: The specification does not explicitly provide ESD rating data; consult the datasheet for precise ESD protection details.


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