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SI2324DS-T1-GE3
+Lista de MateriaisMOSFET N-CH 100V 2.3A SOT23-3
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FabricanteVishay Siliconix
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Peça do Fabricante #SI2324DS-T1-GE3
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Em Estoque7026
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SI2324 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 234mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 50 V |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
The SI2324DS-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. It features a N-channel configuration, which allows it to efficiently control current flow in electronic circuits. With a low on-resistance (RDS(on)), this MOSFET minimizes power loss, making it suitable for applications such as DC-DC converters, power management systems, and motor drivers.
Key specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 60A, which contribute to its versatility in various electronic designs. The package is compact, typically available in a SO-8 form factor, allowing for easy integration into space-constrained designs.
The SI2324DS-T1-GE3 is favored for its reliability and efficiency, making it a popular choice among engineers for both consumer electronics and industrial applications. Its ability to handle high currents and voltages while maintaining low thermal resistance makes it essential in modern power electronics.
Key specifications include a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 60A, which contribute to its versatility in various electronic designs. The package is compact, typically available in a SO-8 form factor, allowing for easy integration into space-constrained designs.
The SI2324DS-T1-GE3 is favored for its reliability and efficiency, making it a popular choice among engineers for both consumer electronics and industrial applications. Its ability to handle high currents and voltages while maintaining low thermal resistance makes it essential in modern power electronics.
Equivalent
The SI2324DS-T1-GE3 is a N-channel MOSFET, and equivalent products can include the AO3400, BSS138, and IRLZ44N When considering an equivalent, ensure other parameters like voltage, current ratings, and package type match your application requirements. Always verify the specific characteristics in the datasheets.
Features
The SI2324DS-T1-GE3 is a high-performance N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Low On-Resistance (Rds(on)): This reduces power loss and improves efficiency, making it suitable for applications that require high current handling.
2. High Voltage Rating: Designed to handle voltages up to 30V, making it ideal for various power supply circuits.
3. Fast Switching Speed: Enhances performance in high-frequency applications, contributing to lower switching losses.
4. Compact Package: Offered in a small SO-8 package, it saves PCB space and simplifies designs.
5. Thermal Performance: Good thermal characteristics allow for reliable operation under demanding conditions.
6. Low Gate Charge (Qg): Ensures reduced drive power, facilitating efficient transistor operation.
Overall, the SI2324DS-T1-GE3 is well-suited for applications like DC-DC converters, load switching, and other power management systems.
1. Low On-Resistance (Rds(on)): This reduces power loss and improves efficiency, making it suitable for applications that require high current handling.
2. High Voltage Rating: Designed to handle voltages up to 30V, making it ideal for various power supply circuits.
3. Fast Switching Speed: Enhances performance in high-frequency applications, contributing to lower switching losses.
4. Compact Package: Offered in a small SO-8 package, it saves PCB space and simplifies designs.
5. Thermal Performance: Good thermal characteristics allow for reliable operation under demanding conditions.
6. Low Gate Charge (Qg): Ensures reduced drive power, facilitating efficient transistor operation.
Overall, the SI2324DS-T1-GE3 is well-suited for applications like DC-DC converters, load switching, and other power management systems.
Pinout
The SI2324DS-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. The device is designed for low voltage applications and is commonly used in power management and switching applications.
Pin Function:
1. Gate 1 (G1) - Gate of the first N-channel MOSFET.
2. Drain 1 (D1) - Drain of the first N-channel MOSFET.
3. Source 1 (S1) - Source of the first N-channel MOSFET.
4. Gate 2 (G2) - Gate of the second N-channel MOSFET.
5. Drain 2 (D2) - Drain of the second N-channel MOSFET.
6. Source 2 (S2) - Source of the second N-channel MOSFET.
7. Drain (D) - Common drain for the two MOSFETs.
8. Source (S) - Common source for the two MOSFETs.
The device is designed to provide efficient switching and is often used in applications such as DC-DC converters, load switching, and power management systems.
Pin Function:
1. Gate 1 (G1) - Gate of the first N-channel MOSFET.
2. Drain 1 (D1) - Drain of the first N-channel MOSFET.
3. Source 1 (S1) - Source of the first N-channel MOSFET.
4. Gate 2 (G2) - Gate of the second N-channel MOSFET.
5. Drain 2 (D2) - Drain of the second N-channel MOSFET.
6. Source 2 (S2) - Source of the second N-channel MOSFET.
7. Drain (D) - Common drain for the two MOSFETs.
8. Source (S) - Common source for the two MOSFETs.
The device is designed to provide efficient switching and is often used in applications such as DC-DC converters, load switching, and power management systems.
Manufacturer
The manufacturer of the SI2324DS-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of a wide range of electronic components, including resistors, capacitors, inductors, diodes, and transistors. Founded in 1962, Vishay is known for its focus on high-performance components used in various applications, such as automotive, industrial, consumer electronics, telecommunications, and healthcare. The SI2324DS-T1-GE3 specifically is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used for switching and amplification purposes in electronic circuits. Vishay operates on a global scale, with manufacturing facilities, sales offices, and design centers located in multiple countries, ensuring a diverse portfolio and innovation in the electronic components sector.
Application
The SI2324DS-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications. Key application areas include:
1. DC-DC Converters: Efficient switching in power supplies.
2. Load Switching: Controlling power to various loads in devices.
3. Battery Management Systems: Optimizing charge and discharge cycles.
4. LED Drivers: Managing current for LED lighting.
5. Motor Control: Driving and controlling motors in various applications.
Its low on-resistance and fast switching speed make it ideal for these applications, improving efficiency and thermal performance.
1. DC-DC Converters: Efficient switching in power supplies.
2. Load Switching: Controlling power to various loads in devices.
3. Battery Management Systems: Optimizing charge and discharge cycles.
4. LED Drivers: Managing current for LED lighting.
5. Motor Control: Driving and controlling motors in various applications.
Its low on-resistance and fast switching speed make it ideal for these applications, improving efficiency and thermal performance.
Package
The SI2324DS-T1-GE3 is packaged in a small, surface-mount SO-8 (8-pin) package, which is ideal for compact applications.
