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SI2365EDS-T1-GE3
+Lista de MateriaisMOSFET P-CH 20V 5.9A TO236
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FabricanteVishay Siliconix
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Peça do Fabricante #SI2365EDS-T1-GE3
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Ficha Técnica SI2365EDS-T1-GE3 DataSheet
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SI2365 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 8 V |
| Vgs (Max) | ±8V |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Visão Geral
Description
The SI2365EDS-T1-GE3 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance (RDS(on)) and fast switching capabilities, making it suitable for various uses, including DC-DC converters and load switching in power supplies.
Key specifications typically include a maximum drain-source voltage (VDS) of around 30V and a continuous drain current (ID) of approximately 50A, depending on the thermal conditions. The device is packaged in a compact SO-8 form factor, facilitating easy integration into space-constrained designs.
Its low gate charge (Qg) helps to minimize switching losses, contributing to overall energy efficiency. The SI2365EDS-T1-GE3 is ideal for applications in consumer electronics, automotive systems, and other areas where efficient power management is essential.
For design considerations, ensure proper thermal management and adhere to the recommended operating conditions outlined in the datasheet to optimize performance and reliability.
Key specifications typically include a maximum drain-source voltage (VDS) of around 30V and a continuous drain current (ID) of approximately 50A, depending on the thermal conditions. The device is packaged in a compact SO-8 form factor, facilitating easy integration into space-constrained designs.
Its low gate charge (Qg) helps to minimize switching losses, contributing to overall energy efficiency. The SI2365EDS-T1-GE3 is ideal for applications in consumer electronics, automotive systems, and other areas where efficient power management is essential.
For design considerations, ensure proper thermal management and adhere to the recommended operating conditions outlined in the datasheet to optimize performance and reliability.
Equivalent
The SI2365EDS-T1-GE3 is a N-channel MOSFET. Equivalent products include the BSS138, SI2302, and IRF3708. Ensure to check specifications such as voltage, current ratings, and Rds(on) to confirm compatibility for your specific application.
Features
The SI2365EDS-T1-GE3 is a dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (I_d) up to 45A, providing robust performance in high-current scenarios.
3. R_DS(on): It offers low on-resistance (R_ds(on)) of approximately 8 mΩ at V_gs = 10V, enabling efficient power conversion with minimal heat generation.
4. Package Type: Available in a compact SO-8 package, ensuring ease of integration into various circuit designs.
5. Fast Switching Speed: Designed for quick switching, contributing to enhanced efficiency in applications like DC-DC converters and power supplies.
6. Thermal Performance: It features good thermal characteristics, allowing for reliable operation under high-load conditions.
Overall, the SI2365EDS-T1-GE3 is well-suited for efficient, high-performance switching applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_ds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The MOSFET can handle continuous drain current (I_d) up to 45A, providing robust performance in high-current scenarios.
3. R_DS(on): It offers low on-resistance (R_ds(on)) of approximately 8 mΩ at V_gs = 10V, enabling efficient power conversion with minimal heat generation.
4. Package Type: Available in a compact SO-8 package, ensuring ease of integration into various circuit designs.
5. Fast Switching Speed: Designed for quick switching, contributing to enhanced efficiency in applications like DC-DC converters and power supplies.
6. Thermal Performance: It features good thermal characteristics, allowing for reliable operation under high-load conditions.
Overall, the SI2365EDS-T1-GE3 is well-suited for efficient, high-performance switching applications.
Pinout
The SI2365EDS-T1-GE3 is a dual N-channel MOSFET designed for efficient power management in various applications. It comes in a 6-lead SOT-23 package with a pin count of 6.
The pin functions are as follows:
1. Gate (G): Controls the MOSFET operation; used to switch the device on and off.
2. Drain (D1): The output terminal for the first N-channel MOSFET.
3. Source (S1): The ground or return path for the first N-channel MOSFET.
4. Drain (D2): The output terminal for the second N-channel MOSFET.
5. Source (S2): The ground or return path for the second N-channel MOSFET.
6. Gate (G2): Controls the operation of the second N-channel MOSFET.
This device is suitable for applications such as load switching and power management in portable electronics.
The pin functions are as follows:
1. Gate (G): Controls the MOSFET operation; used to switch the device on and off.
2. Drain (D1): The output terminal for the first N-channel MOSFET.
3. Source (S1): The ground or return path for the first N-channel MOSFET.
4. Drain (D2): The output terminal for the second N-channel MOSFET.
5. Source (S2): The ground or return path for the second N-channel MOSFET.
6. Gate (G2): Controls the operation of the second N-channel MOSFET.
This device is suitable for applications such as load switching and power management in portable electronics.
Manufacturer
The SI2365EDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a prominent American company specializing in the production of discrete semiconductors and passive electronic components. Founded in 1962, Vishay is known for its extensive range of products, including diodes, resistors, capacitors, and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) like the SI2365EDS-T1-GE3.
Vishay operates globally and serves various industries such as automotive, industrial, consumer electronics, telecommunications, and military. The company focuses on innovation and technology development, aiming to provide high-performance components that meet the needs of modern electronic applications. Their commitment to quality and reliability has made them a key player in the electronics market, supplying components that are essential for a wide variety of electronic devices.
Vishay operates globally and serves various industries such as automotive, industrial, consumer electronics, telecommunications, and military. The company focuses on innovation and technology development, aiming to provide high-performance components that meet the needs of modern electronic applications. Their commitment to quality and reliability has made them a key player in the electronics market, supplying components that are essential for a wide variety of electronic devices.
Application
The SI2365EDS-T1-GE3 is a dual N-channel MOSFET designed for various applications, including:
1. Power Management: Used in DC-DC converters and voltage regulation circuits to improve efficiency.
2. Load Switching: Suitable for switching loads in consumer electronics, automotive systems, and industrial equipment.
3. Battery Management: Utilized in battery protection circuits and charging systems.
4. Signal Switching: Functions in RF amplifiers and signal routing applications.
5. LED Drivers: Employed in driving LED lights and backlighting systems.
Its low on-resistance and fast switching capabilities make it suitable for these areas.
1. Power Management: Used in DC-DC converters and voltage regulation circuits to improve efficiency.
2. Load Switching: Suitable for switching loads in consumer electronics, automotive systems, and industrial equipment.
3. Battery Management: Utilized in battery protection circuits and charging systems.
4. Signal Switching: Functions in RF amplifiers and signal routing applications.
5. LED Drivers: Employed in driving LED lights and backlighting systems.
Its low on-resistance and fast switching capabilities make it suitable for these areas.
Package
The SI2365EDS-T1-GE3 is packaged in a small SOT-23-6 type package. This compact surface mount package is designed for efficient space utilization in electronic circuits.
