Imagens apenas para referência
SI4946BEY-T1-GE3
+Lista de MateriaisMOSFET 2N-CH 60V 6.5A 8-SOIC
-
FabricanteVishay Siliconix
-
Peça do Fabricante #SI4946BEY-T1-GE3
-
Ficha Técnica SI4946BEY-T1-GE3 DataSheet
-
Pacote SOIC-8
-
Em Estoque3339
365 Garantia de Qualidade em 1 dia
7*24 Garantia de serviço em 24 horas
90-Garantia de pós-venda em 1 dia
Garantia de Produto Genuíno
Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 6.5A |
| RdsOn(Max)@IdVgs | 41mOhm @ 5.3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 25nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 840pF @ 30V |
| Power-Max | 3.7W |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Visão Geral
Description
### Key Features:
- Low On-Resistance (RDS(on)): Minimizes power loss.
- Dual-Channel Design: Compact solution for synchronous rectification.
- Voltage Rating: 30V (drain-to-source).
- Current Handling: Up to 6.3A per channel.
- Logic-Level Gate Drive: Compatible with 3V/5V control signals.
- Thermally Enhanced Package: PowerPAK® SO-8 for better heat dissipation.
### Applications:
- Portable electronics
- Power supplies
- Motor control
This MOSFET is RoHS-compliant and optimized for space-constrained, high-performance designs.
Equivalent
- FDS8949 (Fairchild/ON Semi)
- DMN2019LSN (Diodes Inc.)
- AO4822 (Alpha & Omega)
- NDS9948 (ON Semi)
These alternatives offer similar specifications (e.g., voltage, current, RDS(on)) and are commonly used in power switching applications. Always verify datasheets for exact compatibility.
Features
- Voltage Rating: 30V (Drain-Source)
- Current Rating: 6.3A (continuous per channel)
- Low On-Resistance: 28mΩ (max at VGS = 10V)
- Logic-Level Gate Drive: Fully enhanced at 4.5V (VGS)
- Fast Switching: Low gate charge (Qg = 8.5nC typical)
- Dual Configuration: Common-drain or independent operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
- Applications: Power management, load switching, DC-DC converters
Designed for efficiency in space-constrained designs, it combines low conduction losses with high-speed performance.
Pinout
### Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- Logic-level gate drive (compatible with 3.3V/5V signals).
- Common drain configuration (pins 1,2,3 = Source 1; pins 5,6,7 = Source 2; pin 4 = Gate 1; pin 8 = Gate 2; drains internally connected to the tab).
### Applications:
- Power management in DC-DC converters, motor control, and load switching.
Pinout Summary:
- Pins 1,2,3: Source 1
- Pin 4: Gate 1
- Pins 5,6,7: Source 2
- Pin 8: Gate 2
- Exposed pad (tab): Common Drain
Application
1. Power Management – DC-DC converters, voltage regulation.
2. Load Switching – Battery protection, power distribution.
3. Motor Control – Small motor drivers in consumer electronics.
4. Portable Devices – Smartphones, tablets (efficient power handling).
5. Automotive Systems – LED drivers, infotainment power circuits.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency applications.
