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SI7115DN-T1-GE3
+Lista de MateriaisMOSFET P-CH 150V 8.9A PPAK1212-8
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FabricanteVishay Siliconix
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Peça do Fabricante #SI7115DN-T1-GE3
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Ficha Técnica SI7115DN-T1-GE3 DataSheet
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Pacote PowerPAK-1212-8
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 8.9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 295mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 42 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1190 pF @ 50 V |
| PowerDissipation(Max) | 3.7W (Ta), 52W (Tc) |
| OperatingTemperature | -50°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® 1212-8 |
Visão Geral
Description
This MOSFET operates with a low threshold voltage, making it suitable for low-voltage applications. It is encapsulated in a PowerPAK SO-8 package, which provides effective thermal performance and compactness. The SI7115DN-T1-GE3 is known for its robustness and reliability in various operating conditions.
Engineers choose the SI7115DN-T1-GE3 for projects requiring efficient power handling and thermal management. Its application areas include computing, telecommunications, and consumer electronics. Overall, the SI7115DN-T1-GE3 is valued for its balance of performance, size, and reliability.
Equivalent
1. NXP PSMN7R0-30YLD
2. Infineon BSC123N08NS5
3. ON Semiconductor NTMFS0015N
Always verify the specific requirements of your application, as slight differences can affect performance.
Features
1. Voltage and Current Ratings: It typically accommodates a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 15A, making it suitable for moderate power applications.
2. Low On-Resistance: It features a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency, crucial for applications requiring high efficiency.
3. Package: This MOSFET is housed in a PowerPAK 1212-8 package, providing a small footprint that is ideal for space-constrained designs.
4. Thermal Performance: The package offers good thermal performance, which helps in dissipating heat efficiently during operation.
5. Applications: It is commonly used in load switching, battery protection, DC-DC converters, and power management in portable and consumer electronics.
These features make the SI7115DN-T1-GE3 a versatile component for various electronic applications requiring reliable switching performance and efficient power management.
Pinout
The SI7115DN-T1-GE3 comes in an SO-8 package with a total of 8 pins. In this configuration, typically, the pins are arranged as follows:
- Pins 1, 2, 3: Source (S)
- Pin 4: Gate (G)
- Pins 5, 6, 7, 8: Drain (D)
The PowerPAK® SO-8 package provides enhanced heat dissipation and is designed for efficient thermal and electrical performance. The MOSFET is often used in DC-DC converters, power management systems, and motor control circuits, among other applications. Its low on-resistance and high current handling capabilities make it suitable for high-efficiency designs. Always refer to the manufacturer's datasheet for detailed specifications and pin configurations pertinent to specific applications.
Manufacturer
Application
1. DC-DC Converters: Used in power supply circuits to efficiently step down or step up voltage levels.
2. Load Switches: Suitable for use in battery-operated devices where power conservation is crucial.
3. Motor Drives: Employed in controlling electric motors in consumer electronics and industrial applications.
4. LED Lighting: Used in driving LED circuits due to its efficient power handling capabilities.
5. Power Management in Portable Devices: Ideal for smartphones, tablets, and laptops where space and power efficiency are priorities.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.