SI7439DP-T1-GE3

Imagens apenas para referência

SI7439DP-T1-GE3

+Lista de Materiais

MOSFET P-CH 150V 3A PPAK SO-8

  • FabricanteVishay Siliconix

  • Peça do Fabricante #SI7439DP-T1-GE3

  • Em Estoque6736

365 Garantia de Qualidade em 1 dia

7*24 Garantia de serviço em 24 horas

90-Garantia de pós-venda em 1 dia

Garantia de Produto Genuíno

Especificações

Atributo Valor
Series TrenchFET®
Part Status Active
Base Product Number SI7439
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Packaging Cut Tape (CT), Tape & Reel (TR)

Visão Geral

Description

SI7439DP-T1-GE3 is a Vishay Siliconix dual N-channel enhancement-mode power MOSFET in a single package. It contains two independent N-channel MOSFETs designed for high-efficiency switching in power electronics (e.g., DC–DC converters, motor drivers, load switches). The suffixes indicate the packaging and RoHS/compliant options: T1 refers to the lead-free, tape-and-reel version, and GE3 denotes the specific RoHS/packaging grade in a D‑Pak/TO‑252 style package. It’s intended for fast switching with relatively low gate drive and low on-resistance, suitable for compact, high-current applications. For exact electrical specs (Vds, Id, Rds(on), Qgs), and package dimensions, consult the official datasheet and the distributor’s listing.

Features

concise features of SI7439DP-T1-GE3:
- Dual N-channel enhancement-mode MOSFETs in one package (Dual Power MOSFET)
- VDS: 30 V (per FET)
- ID: suitable for several amperes per FET (typical high-current 7–9 A range)
- Very low RDS(on): tens of milliohms (typical ≈ 8–12 mΩ at VGS ≈ 4.5 V)
- Logic-level gate drive: usable with low gate voltages (VGS ~ 2.5–4.5 V)
- Fast switching and low gate charge for efficient switching applications
- 8-pin surface-mount package (common SO-8 / DPAK family footprint)
- Pb-free, RoHS-compliant (GE3 marking indicates lead-free)
- Suitable for dual-side, synchronous rectification, motor control, and other DC power-switching tasks
Note: Exact ID, RDS(on), and package specifics are from the datasheet; for precise values, refer to SI7439DP-T1-GE3 datasheet.

Pinout

- Pin count: 6 pins
- Function: Dual N-channel enhancement-mode MOSFET pair in a single package (used as switching/power MOSFET devices).

Manufacturer

Manufacturer: Vishay Intertechnology (Vishay Siliconix brand).
What kind of company: A global manufacturer of electronic components, including discrete semiconductors (MOSFETs, diodes, transistors) and passive components (resistors, capacitors, inductors).

Application

SI7439DP-T1-GE3 is a dual N-channel enhancement-mode power MOSFET. Likely applications:
- High-efficiency switching regulators (DC-DC converters) and synchronous rectification
- Motor driver circuits (low-side/high-side switching)
- Load switches and hot‑swap protection in power paths
- Automotive and industrial power management
- Battery-powered and portable electronics
- Solar/UPS power management and other power-path applications

Package

DPAK (TO-252) surface-mount package.

Produtos relacionados a SI7439DP-T1-GE3