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SI7738DP-T1-GE3
+Lista de MateriaisMOSFET N-CH 150V 30A PPAK SO-8
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FabricanteVishay Siliconix
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Peça do Fabricante #SI7738DP-T1-GE3
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Ficha Técnica SI7738DP-T1-GE3 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 38mOhm @ 7.7A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 53 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2100 pF @ 75 V |
| Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Visão Geral
Description
The SI7738DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is part of the TrenchFET® Gen III family, known for its enhanced power efficiency and compact design, making it suitable for various high-performance applications. Key features include low on-resistance and high current handling capabilities, which contribute to reduced conduction losses and improved overall system efficiency.
This MOSFET is commonly used in applications such as DC-DC converters, power management systems, and load switches, where efficient power handling is crucial. The device is housed in a PowerPAK SO-8 package, which offers excellent thermal performance and is optimized for compact PCB layouts, thanks to its small footprint and low profile.
The SI7738DP-T1-GE3 is designed to operate at low gate drive voltages and supports fast switching speeds, enabling designers to achieve higher power densities in their circuits. With its robust performance and reliability, this MOSFET is well-suited for use in automotive, industrial, and consumer electronics sectors.
This MOSFET is commonly used in applications such as DC-DC converters, power management systems, and load switches, where efficient power handling is crucial. The device is housed in a PowerPAK SO-8 package, which offers excellent thermal performance and is optimized for compact PCB layouts, thanks to its small footprint and low profile.
The SI7738DP-T1-GE3 is designed to operate at low gate drive voltages and supports fast switching speeds, enabling designers to achieve higher power densities in their circuits. With its robust performance and reliability, this MOSFET is well-suited for use in automotive, industrial, and consumer electronics sectors.
Equivalent
The SI7738DP-T1-GE3 is a MOSFET from Vishay. Equivalent products would be those with similar specifications such as voltage rating, current rating, and package type. Possible equivalents could include:
1. Infineon's BSC123N08NS3G
2. ON Semiconductor's NTMFS4935N
3. Nexperia's PSMN2R4-30MLC
Always verify the specifications and consult datasheets to ensure compatibility for your specific application.
1. Infineon's BSC123N08NS3G
2. ON Semiconductor's NTMFS4935N
3. Nexperia's PSMN2R4-30MLC
Always verify the specifications and consult datasheets to ensure compatibility for your specific application.
Features
The SI7738DP-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features an N-channel and is part of the TrenchFET family, offering efficient power switching. Key features include:
1. Voltage Rating: The device typically supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 13.4A, depending on the case temperature.
3. R_DS(on): Features a low on-resistance, usually around 11 mΩ, which minimizes power losses and improves efficiency.
4. Package: Available in a PowerPAK® SO-8 package, which enhances thermal performance and allows for a compact design.
5. Applications: Commonly used in DC-DC converters, load switching, and general-purpose power management.
6. Enhanced Switching: Offers fast switching capabilities, crucial for high-frequency applications.
7. Temperature Range: Operates efficiently within a wide temperature range, suitable for various environmental conditions.
These features make the SI7738DP-T1-GE3 a versatile component for optimizing power efficiency in electronic circuits.
1. Voltage Rating: The device typically supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Handling: It can handle a continuous drain current (I_D) of up to 13.4A, depending on the case temperature.
3. R_DS(on): Features a low on-resistance, usually around 11 mΩ, which minimizes power losses and improves efficiency.
4. Package: Available in a PowerPAK® SO-8 package, which enhances thermal performance and allows for a compact design.
5. Applications: Commonly used in DC-DC converters, load switching, and general-purpose power management.
6. Enhanced Switching: Offers fast switching capabilities, crucial for high-frequency applications.
7. Temperature Range: Operates efficiently within a wide temperature range, suitable for various environmental conditions.
These features make the SI7738DP-T1-GE3 a versatile component for optimizing power efficiency in electronic circuits.
Pinout
The SI7738DP-T1-GE3 is a power MOSFET from Vishay Siliconix. It is a dual N-channel MOSFET designed for high-efficiency power switching applications. This component is housed in a PowerPAK SO-8 package. The pin configuration is as follows:
1. Pin Count: The package typically has 8 pins.
2. Pin Function:
- Pins 1, 2, 3: Source (S1) for the first MOSFET
- Pin 4: Gate (G1) for the first MOSFET
- Pin 5: Gate (G2) for the second MOSFET
- Pins 6, 7, 8: Source (S2) for the second MOSFET
- The drain connections for both MOSFETs are tied to the substrate and are typically connected to the top side of the package.
This configuration is designed to allow efficient heat dissipation and high current handling, making it suitable for various power management applications.
1. Pin Count: The package typically has 8 pins.
2. Pin Function:
- Pins 1, 2, 3: Source (S1) for the first MOSFET
- Pin 4: Gate (G1) for the first MOSFET
- Pin 5: Gate (G2) for the second MOSFET
- Pins 6, 7, 8: Source (S2) for the second MOSFET
- The drain connections for both MOSFETs are tied to the substrate and are typically connected to the top side of the package.
This configuration is designed to allow efficient heat dissipation and high current handling, making it suitable for various power management applications.
Manufacturer
The SI7738DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global technology company that specializes in the design, manufacture, and supply of a broad range of discrete semiconductors and passive electronic components. Founded in 1962, the company provides components that are essential for various electronic devices and systems, serving industries such as automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. Vishay is known for its extensive product portfolio, which includes MOSFETs, diodes, optoelectronics, resistors, capacitors, and inductors, among others. The company's products are used in various applications to manage power, protect circuits, and process signals.
Application
The SI7738DP-T1-GE3 is a MOSFET used in various electronic applications. Key areas include power management systems, such as DC-DC converters and power supply units in computing and telecommunications. It is also used in motor control circuits, load switching for consumer electronics, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for applications requiring high efficiency and reliability. Additionally, it can be found in automotive systems for controlling electric motors and other components, along with industrial applications requiring robust and efficient power handling.
Package
The SI7738DP-T1-GE3 is a dual N-channel MOSFET in a PowerPAK SO-8 package. This package type is known for its small size and efficient thermal performance, making it suitable for compact electronic designs requiring efficient power management.
