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SI7884BDP-T1-E3
+Lista de MateriaisMOSFET N-CH 40V 58A PPAK SO-8
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FabricanteVishay Siliconix
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Peça do Fabricante #SI7884BDP-T1-E3
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Ficha Técnica SI7884BDP-T1-E3 DataSheet
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3540 pF @ 20 V |
| Power Dissipation (Max) | 4.6W (Ta), 46W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7884 |
Visão Geral
Description
The SI7884BDP-T1-E3 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance, fast switching times, and is suitable for DC-DC converters, power supplies, and motor control systems. The device operates at higher temperatures and offers robust performance with a maximum V_DS (drain-source voltage) of 30V and a maximum continuous drain current of 50A.
The package type is typically a DPAK (TO-252), providing effective thermal management for compact designs. Its low gate charge and minimal recovery loss enhance efficiency, making the SI7884BDP-T1-E3 ideal for applications requiring high-frequency operation.
Additionally, the MOSFET is characterized by high reliability and is often used in automotive and industrial applications. Its features contribute to reduced energy consumption and improved system performance. Overall, the SI7884BDP-T1-E3 is a versatile choice for engineers looking to optimize power efficiency in their designs.
The package type is typically a DPAK (TO-252), providing effective thermal management for compact designs. Its low gate charge and minimal recovery loss enhance efficiency, making the SI7884BDP-T1-E3 ideal for applications requiring high-frequency operation.
Additionally, the MOSFET is characterized by high reliability and is often used in automotive and industrial applications. Its features contribute to reduced energy consumption and improved system performance. Overall, the SI7884BDP-T1-E3 is a versatile choice for engineers looking to optimize power efficiency in their designs.
Equivalent
The SI7884BDP-T1-E3 is a N-channel MOSFET known for its low R_DS(on) and high efficiency. Equivalent products include the IRLZ44N BSS138, and AO3400, which offer similar specifications in terms of voltage and current ratings. However, always verify the specific parameters like V_DS, I_D, and R_DS(on) for exact replacements in your design.
Features
The SI7884BDP-T1-E3 is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Offers a continuous drain current (I_D) of up to 80A, suitable for high-current applications.
3. R_DS(on): Low on-resistance of approximately 4.5 mΩ at a gate-source voltage (V_GS) of 10V, enhancing efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges between 1V to 2.5V, allowing for compatibility with low-voltage drive circuits.
5. Package Type: Comes in a DPAK package, which aids in thermal management and is suitable for surface mounting.
6. Fast Switching: Capable of fast switching speeds, making it ideal for synchronous rectification and DC-DC converters.
7. Thermal Resistance: Low thermal resistance ensures efficient heat dissipation.
These features make the SI7884BDP-T1-E3 suitable for applications in power supplies, motor drivers, and other high-efficiency circuits.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Offers a continuous drain current (I_D) of up to 80A, suitable for high-current applications.
3. R_DS(on): Low on-resistance of approximately 4.5 mΩ at a gate-source voltage (V_GS) of 10V, enhancing efficiency.
4. Gate Threshold Voltage: V_GS(th) ranges between 1V to 2.5V, allowing for compatibility with low-voltage drive circuits.
5. Package Type: Comes in a DPAK package, which aids in thermal management and is suitable for surface mounting.
6. Fast Switching: Capable of fast switching speeds, making it ideal for synchronous rectification and DC-DC converters.
7. Thermal Resistance: Low thermal resistance ensures efficient heat dissipation.
These features make the SI7884BDP-T1-E3 suitable for applications in power supplies, motor drivers, and other high-efficiency circuits.
Pinout
The SI7884BDP-T1-E3 is a N-channel MOSFET with a total of 8 pins. It is designed for high efficiency in switching applications, particularly in power management and conversion circuits. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output where the load is connected; current flows from the drain when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET when it is conducting.
The specific pinout typically includes additional connections for thermal management and electrical performance, but the primary functionality revolves around the gate, drain, and source connections. This device is characterized by low on-resistance and fast switching speeds, making it suitable for applications like DC-DC converters and motor drives.
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output where the load is connected; current flows from the drain when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET when it is conducting.
The specific pinout typically includes additional connections for thermal management and electrical performance, but the primary functionality revolves around the gate, drain, and source connections. This device is characterized by low on-resistance and fast switching speeds, making it suitable for applications like DC-DC converters and motor drives.
Manufacturer
The SI7884BDP-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is based in Malvern, Pennsylvania, and operates in various sectors including automotive, industrial, computing, and consumer electronics.
Vishay specializes in a wide range of products, including diodes, transistors, capacitors, resistors, and inductors, catering to the growing demand for electronic components in numerous applications. The SI7884BDP-T1-E3 is a dual N-channel MOSFET designed for high-efficiency switching applications, highlighting Vishay's commitment to providing innovative solutions in power management and energy efficiency.
Overall, Vishay is recognized for its extensive product portfolio, robust engineering capabilities, and focus on quality, making it a key player in the electronics industry.
Vishay specializes in a wide range of products, including diodes, transistors, capacitors, resistors, and inductors, catering to the growing demand for electronic components in numerous applications. The SI7884BDP-T1-E3 is a dual N-channel MOSFET designed for high-efficiency switching applications, highlighting Vishay's commitment to providing innovative solutions in power management and energy efficiency.
Overall, Vishay is recognized for its extensive product portfolio, robust engineering capabilities, and focus on quality, making it a key player in the electronics industry.
Application
The SI7884BDP-T1-E3 is a N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, motor control, and LED drivers. Additionally, it is utilized in consumer electronics, telecommunications, and automotive applications where compact and efficient power solutions are essential.
Package
The SI7884BDP-T1-E3 is packaged in a SOIC-8 (Small Outline Integrated Circuit) package type. This surface-mount package is designed for efficient thermal performance and space-saving in electronic applications.
