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SIR470DP-T1-GE3
+Lista de MateriaisMOSFET N-CH 40V 60A PPAK SO-8
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FabricanteVishay Siliconix
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Peça do Fabricante #SIR470DP-T1-GE3
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Ficha Técnica SIR470DP-T1-GE3 DataSheet
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Especificações
| Atributo | Valor |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5660 pF @ 20 V |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SIR470 |
Visão Geral
Description
The SIR470DP-T1-GE3 is a high-performance, dual N-channel MOSFET, designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in various electronic devices, including power supplies, DC-DC converters, and motor control circuits. With a maximum drain-source voltage of 30V and a continuous drain current rating of 60A, it provides effective performance in high-efficiency applications.
The device is housed in a compact DPAK package, ensuring ease of integration into circuit designs while promoting thermal efficiency. Its low gate charge simplifies drive requirements, making it compatible with standard driving circuits.
Overall, the SIR470DP-T1-GE3 is ideal for engineers looking to enhance power efficiency and reliability in their electronic designs, contributing to improved performance in consumer electronics, automotive systems, and industrial applications.
The device is housed in a compact DPAK package, ensuring ease of integration into circuit designs while promoting thermal efficiency. Its low gate charge simplifies drive requirements, making it compatible with standard driving circuits.
Overall, the SIR470DP-T1-GE3 is ideal for engineers looking to enhance power efficiency and reliability in their electronic designs, contributing to improved performance in consumer electronics, automotive systems, and industrial applications.
Equivalent
The SIR470DP-T1-GE3 is a P-channel MOSFET. Equivalent products include the IRF9540, FQP27P06, and STP16NF06. Always check the specific datasheets for parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility in your application.
Features
The SIR470DP-T1-GE3 is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current up to 75A, allowing it to manage significant loads.
3. Low Rds(on): With a low on-resistance (Rds(on)) around 8.5 mΩ, it minimizes power loss and improves efficiency in switching applications.
4. Fast Switching: The MOSFET is optimized for fast switching, enhancing performance in high-frequency applications.
5. Thermal Characteristics: It has a maximum junction temperature of 150°C, allowing for reliable operation in demanding thermal conditions.
6. Package Type: Offered in a TO-220 package, it provides ease of mounting and effective heat dissipation.
Overall, the SIR470DP-T1-GE3 is well-suited for applications like power supplies, motor controls, and DC-DC converters.
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current up to 75A, allowing it to manage significant loads.
3. Low Rds(on): With a low on-resistance (Rds(on)) around 8.5 mΩ, it minimizes power loss and improves efficiency in switching applications.
4. Fast Switching: The MOSFET is optimized for fast switching, enhancing performance in high-frequency applications.
5. Thermal Characteristics: It has a maximum junction temperature of 150°C, allowing for reliable operation in demanding thermal conditions.
6. Package Type: Offered in a TO-220 package, it provides ease of mounting and effective heat dissipation.
Overall, the SIR470DP-T1-GE3 is well-suited for applications like power supplies, motor controls, and DC-DC converters.
Pinout
The SIR470DP-T1-GE3 is a N-channel MOSFET with a pin count of 4. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current flows out when the device is on.
3. Source (S) - The terminal through which current flows into the device.
4. Body (B) - Internally connected to the source and is typically not externally used.
This MOSFET is designed for power management applications, offering low on-resistance and fast switching capabilities, making it suitable for various electronic circuits, such as power supplies and motor control systems.
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The terminal through which current flows out when the device is on.
3. Source (S) - The terminal through which current flows into the device.
4. Body (B) - Internally connected to the source and is typically not externally used.
This MOSFET is designed for power management applications, offering low on-resistance and fast switching capabilities, making it suitable for various electronic circuits, such as power supplies and motor control systems.
Manufacturer
The SIR470DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. The company specializes in a wide range of products, including MOSFETs, diodes, resistors, capacitors, and inductors, among others.
Founded in 1962, Vishay operates in various industries, including automotive, consumer electronics, telecommunications, and industrial applications. The company is known for its commitment to innovation and quality, supplying components that are critical for modern electronic devices. Vishay's products are utilized in a variety of applications, including power management, signal processing, and energy efficiency solutions.
Overall, Vishay is a major player in the electronic components market, recognized for its extensive product portfolio and technological expertise.
Founded in 1962, Vishay operates in various industries, including automotive, consumer electronics, telecommunications, and industrial applications. The company is known for its commitment to innovation and quality, supplying components that are critical for modern electronic devices. Vishay's products are utilized in a variety of applications, including power management, signal processing, and energy efficiency solutions.
Overall, Vishay is a major player in the electronic components market, recognized for its extensive product portfolio and technological expertise.
Application
The SIR470DP-T1-GE3 is a N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control systems. It is commonly used in consumer electronics, automotive systems, and industrial automation due to its high efficiency and low on-resistance characteristics. Additionally, it can be found in applications involving load switching and power supply circuits, making it suitable for devices requiring reliable and efficient power handling.
Package
The SIR470DP-T1-GE3 is packaged in a TO-220 style package. This type of package is commonly used for high-power applications, providing efficient thermal management and mechanical robustness.
