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SIR474DP-T1-GE3
+Lista de MateriaisMOSFET N-CH 30V 20A PPAK SO-8
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FabricanteVishay Siliconix
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Peça do Fabricante #SIR474DP-T1-GE3
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Ficha Técnica SIR474DP-T1-GE3 DataSheet
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Pacote PowerPAK-SO-8
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Especificações
| Atributo | Valor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 9.5mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 985 pF @ 15 V |
| Power Dissipation (Max) | 3.9W (Ta), 29.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Visão Geral
Description
- Low On-Resistance (RDS(on)): Minimizes conduction losses for efficient power handling.
- High Current Rating: Supports up to 75A (continuous) at 25°C, ideal for demanding loads.
- Fast Switching: Optimized for high-frequency applications like DC-DC converters and motor drives.
- Robust Package: PowerPAK® SO-8 for improved thermal performance and space efficiency.
- Wide Voltage Range: 40V drain-source voltage (VDS) rating.
Common uses include switching regulators, battery protection circuits, and load switches. Its GE3 suffix denotes enhanced performance in efficiency and thermal characteristics.
For detailed specs, refer to Vishay’s datasheet.
Equivalent
- Infineon IPD90N04S4-04
- Vishay SiR474DP (same series)
- ON Semiconductor NTMFS4C024N
- STMicroelectronics STL4DN4F6
These alternatives offer comparable specs (e.g., 40V, ~4mΩ RDS(on), dual-channel). Verify pin compatibility and electrical characteristics for your application.
Features
- Voltage Rating: 40V
- Current Rating: 140A (pulsed) / 70A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-frequency applications
- Gate Charge (Qg): 110nC (typical) for reduced switching losses
- Package: PowerPAK® SO-8 (improved thermal performance)
- AEC-Q101 Qualified: Suitable for automotive applications
- Low Profile: Ideal for space-constrained designs
Applications include DC-DC converters, motor control, and power management in automotive/industrial systems.
Pinout
- Pin Count: 8 pins (standard SO-8 footprint).
- Function: Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Dual MOSFET: Two independent N-channel FETs in one package.
- Low RDS(on): Optimized for minimal conduction losses.
- High-Speed Switching: Suitable for high-frequency applications.
Key pins:
- Source (S1, S2), Gate (G1, G2), Drain (D1, D2)—arranged symmetrically for dual-channel operation.
Common applications include synchronous rectification and load switching.
Manufacturer
Vishay is a well-established company known for producing high-performance discrete semiconductors, diodes, resistors, and capacitors. Founded in 1962, it serves industries like automotive, industrial, computing, and consumer electronics, emphasizing innovation and reliability.
The SIR474DP-T1-GE3 is part of Vishay’s TrenchFET® Gen IV series, designed for efficient power management in applications like DC-DC converters and load switching.
Application
- DC-DC Converters: Used in voltage regulation for power supplies.
- Motor Control: Efficient driving in automotive and industrial systems.
- Load Switching: Power management in consumer electronics.
- Battery Protection: Safeguarding circuits in portable devices.
- LED Lighting: Driving and dimming control in lighting systems.
Its low on-resistance and fast switching make it ideal for energy-sensitive and high-frequency applications.
