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SMMUN2214LT1G
+Lista de MateriaisTRANS PREBIAS NPN 50V SOT23-3
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Fabricanteonsemi
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Peça do Fabricante #SMMUN2214LT1G
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Ficha Técnica SMMUN2214LT1G DataSheet
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Especificações
| Atributo | Valor |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 246 mW |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMUN2214 |
Visão Geral
Description
Equivalent
Features
1. Low On-Resistance (RDS(on)): Ensures efficient operation with minimal power loss during conduction.
2. High Current Capacity: Supports substantial load current, making it suitable for demanding applications.
3. Low Gate Threshold Voltage (VGS(th)): Facilitates easy control by logic-level signals.
4. Surface-Mount Package: Comes in a compact SO-8 package, allowing for space-efficient designs.
5. Fast Switching Speed: Enhances performance in high-frequency applications.
6. Thermal Stability: Designed to operate reliably under varying thermal conditions.
This MOSFET is ideal for use in power supplies, DC-DC converters, and motor drivers, providing robust performance and efficiency in electronic circuits.
Pinout
1. Collector (C1) - the collector terminal for the first NPN transistor.
2. Base (B1) - the base terminal for the first NPN transistor.
3. Emitter (E1) - the emitter terminal for the first NPN transistor.
4. Collector (C2) - the collector terminal for the second NPN transistor.
5. Base (B2) - the base terminal for the second NPN transistor.
6. Emitter (E2) - the emitter terminal for the second NPN transistor.
This device is commonly used for general-purpose switching and amplification applications. Each transistor can operate independently, allowing for versatile circuit designs. The maximum ratings include a collector-emitter voltage (Vce) of 40V and a continuous collector current (Ic) of 1.5A.
Manufacturer
Application
1. Power Supply Circuits: Used in power converters and adapters for efficient rectification.
2. Solar Inverters: Helps in converting DC from solar panels to AC energy.
3. Battery Chargers: Enhances charging efficiency and reduces heat generation.
4. LED Drivers: Improves performance in LED lighting applications.
5. Telecommunications: Utilized in signal processing and RF applications for fast switching.
Overall, it is essential in various electronic devices for efficient power management and conversion.