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SPP04N80C3
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FabricanteTecnologias Infineon
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Peça do Fabricante #SPP04N80C3
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Pacote TO-220-3
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Especificações
| Atributo | Valor |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C3 |
| Factory Pack Quantity | 500 |
| Subcategory | Transistors |
| Part # Aliases | SP000683152 SPP4N8C3XK SPP04N80C3XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 15.65 mm |
| Length | 10 mm |
| Width | 4.4 mm |
| Unit Weight | 2 g |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 800 V |
| Id - Continuous Drain Current | 4 A |
| Rds On | 1.1 Ohms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.1 V |
| Qg - Gate Charge | 31 nC |
| Pd - Power Dissipation | 63 W |
| Channel Mode | Enhancement |
| Fall Time | 12 ns |
| Rise Time | 15 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 72 ns |
| Typical Turn - On Delay Time | 25 ns |
| Package / Case | TO-220-3 |
Visão Geral
Description
This MOSFET is commonly used in switch mode power supplies (SMPS), motor drivers, and other applications that require high-voltage switching. The device features a fast switching speed, which enhances efficiency in high-frequency applications.
The SPP04N80C3 is housed in a TO-220 package, allowing for effective heat dissipation. It is designed to be robust, with built-in protection features that enhance reliability in demanding environments.
Overall, the SPP04N80C3 is a versatile component favored by engineers for its balance of performance and efficiency in high-voltage power management circuits.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage circuits.
2. Current Rating: The MOSFET can handle continuous drain current (I_D) of up to 4A, allowing it to drive moderate loads.
3. R_DS(on): It features a low on-resistance (R_DS(on)) of approximately 0.6 ohms at a gate-source voltage (V_GS) of 10V, which helps reduce power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically between 2V to 4V, allowing for efficient switching.
5. Package Type: Available in a TO-220 package, providing good thermal dissipation and ease of mounting.
6. High-speed Switching: Suitable for fast switching applications, enhancing efficiency in power conversion circuits.
Overall, the SPP04N80C3 is ideal for power management in applications such as power supplies and motor drivers.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A positive voltage at the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the load current flows into the MOSFET. It connects to the positive supply voltage or load.
3. Source (S): This terminal connects to ground or the negative side of the circuit and serves as the output for the current.
Key specifications include a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 4A. The device is commonly used in applications such as switch mode power supplies and motor control due to its high voltage capability and efficiency.
Manufacturer
Application
1. Switching Power Supplies: Used in DC-DC converters and AC-DC power supplies for efficient power management.
2. Motor Control: Employed in driving motors in industrial applications and electric vehicles.
3. Inverter Circuits: Utilized in solar inverters and uninterruptible power supplies (UPS).
4. Lighting Control: Applicable in LED drivers and dimming circuits.
5. Consumer Electronics: Found in various appliances requiring efficient power switching.
The device’s high voltage rating (800V) and low on-resistance make it suitable for these applications.