SQD50P08-25L_GE3

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SQD50P08-25L_GE3

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MOSFET P-CH 80V 50A TO252AA

  • FabricanteVishay Siliconix

  • Peça do Fabricante #SQD50P08-25L_GE3

  • Em Estoque8213

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Especificações

Atributo Valor
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5350 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number SQD50

Visão Geral

Description

The SQD50P08-25L_GE3 is a high-performance Power MOSFET designed for various applications, including power management, switching, and amplification. It features a low on-resistance, providing efficient power conversion and minimizing energy losses. With a voltage rating of 25V and a current rating of up to 50A, it is suitable for both low-voltage and high-current applications.
This MOSFET is optimized for fast switching speeds, making it ideal for use in hard-switching applications like DC-DC converters, motor drives, and power supplies. The SQD50P08-25L_GE3 offers thermal stability, allowing it to operate effectively in demanding environments.
Additionally, its compact package design facilitates easy integration into various circuit designs. Overall, the SQD50P08-25L_GE3 is a reliable choice for engineers seeking efficient and robust solutions in power electronic systems.

Equivalent

The SQD50P08-25L_GE3 is a power MOSFET. Equivalent products include the STP50NF06, IRF3205, and FQP50N06L. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility in your application.

Features

The SQD50P08-25L_GE3 is a high-performance N-channel power MOSFET designed for various applications, including power management and DC-DC converters. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 80V.
2. Continuous Drain Current: Can handle up to 50A, providing robust performance in high-power applications.
3. Low R_DS(on): Offers low on-resistance (typically around 25 mΩ), minimizing conduction losses and improving efficiency.
4. Fast Switching: Designed for quick switching speeds, enhancing overall circuit performance.
5. Thermal Performance: Features a TO-220 package, allowing for efficient heat dissipation.
6. Gate Threshold Voltage: Suitable for a wide range of gate drive voltages, enabling compatibility with various control circuits.
7. Applications: Ideal for use in automotive, industrial, and consumer electronics, particularly in switch-mode power supplies and motor control.
These features make the SQD50P08-25L_GE3 an excellent choice for modern power electronics applications requiring high efficiency and reliability.

Pinout

The SQD50P08-25L_GE3 is a semiconductor device, specifically a power MOSFET. It has a total of 8 pins. The primary functions of these pins include:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The output terminal where the current flows out when the device is on.
3. Source (S) - The input terminal where current flows in.
The pin configuration typically follows a standard layout for power MOSFETs, allowing for easy integration into circuits. The SQD50P08-25L_GE3 is designed for high efficiency in switching applications and is commonly used in power management, motor control, and other electronic applications requiring reliable MOSFET functionality.

Manufacturer

The SQD50P08-25L_GE3 is manufactured by ON Semiconductor, a company known for its wide range of semiconductor solutions. ON Semiconductor specializes in the design and manufacturing of various semiconductor components, including power management, analog, discrete, and logic devices. The company serves diverse markets such as automotive, industrial, communications, and consumer electronics, focusing on providing efficient and innovative technologies. Their products are used in applications ranging from energy-efficient systems to advanced automotive electronics. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has expanded its global presence through strategic acquisitions and partnerships, positioning itself as a key player in the semiconductor industry.

Application

The SQD50P08-25L_GE3 is a power MOSFET used in various applications, including power management systems, switching power supplies, motor drives, and DC-DC converters. Its low on-resistance and high switching speed make it suitable for efficient energy conversion in industrial equipment, consumer electronics, and automotive systems. Additionally, it can be used in renewable energy systems like solar inverters and battery management systems, enhancing overall performance and efficiency in these applications.

Package

The SQD50P08-25L_GE3 is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is suitable for high-power applications.

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