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SSM6N7002KFU
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Especificações
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Description
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of approximately 115 mA, making it suitable for moderate power applications. The gate threshold voltage ranges from 1V to 2.5V, allowing it to be driven directly by logic-level signals.
The SSM6N7002KFU's fast switching speed makes it well-suited for high-frequency circuits, while its low gate charge helps minimize power consumption in portable and battery-operated devices. It is employed in applications like load switches, signal switching, and protective circuits.
Overall, the SSM6N7002KFU is valued for its efficiency, small footprint, and versatility in a wide range of electronic applications.
Equivalent
1. 2N7002DW - by Diodes Incorporated
2. DMN61D8LDW - by Diodes Incorporated
3. SI1902DL - by Vishay
4. BSS123DW - by Infineon Technologies
5. FDG6303N - by ON Semiconductor
These alternatives share similar voltage and current ratings and package types, making them suitable substitutes in many applications. Always verify specific parameters to ensure compatibility.
Features
1. Voltage and Current Ratings:
- Drain-source voltage (V_DS) of 60V.
- Continuous drain current (I_D) up to 115mA.
2. Low On-Resistance:
- Typically around 5Ω, contributing to efficient performance with minimal power loss.
3. Gate-Source Voltage:
- Can handle up to ±20V, providing flexibility in gate drive voltage levels.
4. Fast Switching:
- Designed for high-speed operation, making it suitable for various switching applications.
5. Package Type:
- Available in a compact SOT-23F package, allowing for space-efficient designs.
6. Applications:
- Commonly used in switching applications, load switches, and other general-purpose low-power applications.
This MOSFET is valued for its balance of compact size, efficiency, and performance in low to moderate power applications.
Pinout
1. Pin Count: 6 pins.
2. Pin Functionality:
- Pin 1: Source of MOSFET Q1
- Pin 2: Gate of MOSFET Q1
- Pin 3: Drain of MOSFET Q2
- Pin 4: Source of MOSFET Q2
- Pin 5: Gate of MOSFET Q2
- Pin 6: Drain of MOSFET Q1
3. Function: The SSM6N7002KFU serves as a dual N-channel MOSFET designed for switching applications. It is commonly used in circuits requiring efficient switching, such as power management, load switch applications, and signal switching in portable and battery-powered devices due to its low on-resistance and fast switching capabilities.
Manufacturer
Application
1. Switching Circuits: Used in low-voltage switching applications due to its fast switching speed.
2. Load Switches: Ideal for controlling power to small loads in battery-powered devices.
3. Signal Processing: Employed in analog and digital signal processing circuits.
4. Amplifiers: Used in low-power amplification applications in consumer electronics.
5. RF Applications: Suitable for RF circuits due to its low capacitance and high-frequency performance.
Its compact size and low on-resistance make it suitable for portable and compact electronic devices.