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STB12NM50T4
+Lista de MateriaisMOSFET N-CH 550V 12A D2PAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STB12NM50T4
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Especificações
| Atributo | Valor |
| Series | MDmesh™ |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 550 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 350mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 39 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1000 pF @ 25 V |
| PowerDissipation(Max) | 160W (Tc) |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
| Package/Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| BaseProductNumber | STB12N |
Visão Geral
Description
Key features include low on-resistance (RDS(on)), which reduces power losses and improves efficiency in switching applications. The STB12NM50T4 is typically used in areas such as power supplies, motor drives, and industrial control systems. Its fast switching capabilities enable efficient operation in high-frequency circuits.
MOSFETs like the STB12NM50T4 are crucial in modern electronics, enabling compact designs and improved performance. When using this component, attention must be paid to thermal management and gate drive requirements to ensure reliable operation.
Equivalent
Features
1. Voltage Rating: 500V, suitable for high-voltage applications.
2. Current Rating: 12A, allowing significant current handling.
3. RDS(on): Low on-resistance (0.25 Ω) enhances efficiency by minimizing conduction losses.
4. Gate Threshold Voltage (VGS(th)): Ranges from 2 to 4V, allowing for easy drive with standard voltage levels.
5. Fast Switching: High-speed switching capabilities suitable for applications like DC-DC converters and motor control.
6. Package Type: Available in TO-220, facilitating easy heat dissipation.
7. Thermal Resistance: Features low thermal resistance, ensuring better heat management.
8. Applications: Ideal for use in industrial equipment, automotive systems, and power supplies.
Overall, the STB12NM50T4 is designed for efficiency and reliability in demanding power applications.
Pinout
1. Gate (G): This pin controls the MOSFET's conductivity. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This pin is where the current enters the MOSFET when it is in the "on" state.
3. Source (S): This pin is where the current exits the MOSFET when it is conducting.
The STB12NM50T4 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 12A. It is commonly used in power management applications, including switching power supplies and motor control circuits.
Manufacturer
Founded in 1987 and headquartered in Geneva, Switzerland, STMicroelectronics is known for its innovation in microelectronics and its commitment to sustainability and energy-efficient solutions. The STB12NM50T4 is a power MOSFET, specifically designed for high-voltage applications, and is widely used in power management and switching applications.
STMicroelectronics focuses on creating technologies that enhance energy efficiency and performance, positioning themselves as a leader in the semiconductor industry. Their products are integral to modern electronic systems, enabling advancements in a variety of sectors, including IoT and automotive electrification.
Application
1. Switching Power Supplies - For efficient voltage regulation in converters and inverters.
2. Motor Control - Enabling high-efficiency control in DC and AC motors.
3. LED Drivers - For managing current in LED lighting applications.
4. Telecommunications - In power amplifiers and RF applications.
5. Automotive - Used in power management systems and electric vehicle applications.
6. Industrial Equipment - In automation systems and power distribution.
Its high voltage and current ratings make it suitable for demanding applications.