STB6N80K5

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MOSFET N-CH 800V 4.5A D2PAK

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Especificações

Atributo Valor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series SuperMESH5™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain(Id) @ 25°C 4.5A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1.6Ohm @ 2A, 10V
Vgs(th)(Max) @ Id 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 7.5 nC @ 10 V
Vgs(Max) 30V
Input Capacitance(Ciss)(Max) @ Vds 255 pF @ 100 V
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)

Visão Geral

Description

The STB6N80K5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency performance in electronic devices. It belongs to the MDmesh K5 series, which is known for its low on-resistance and fast switching capabilities, making it ideal for various power conversion applications. The STB6N80K5 can handle a maximum drain current of 6A and a maximum drain-source voltage of 800V.
Key features include:
- Low gate charge and input capacitance, enhancing efficiency and reducing power loss.
- High-speed switching, which is beneficial for applications requiring rapid on/off cycles.
- Robust design with a high avalanche energy rating, ensuring reliability under sudden voltage spikes.
- Suitable for applications such as power supplies, converters, and lighting systems.
Its compact DPAK package allows for efficient thermal management and easy integration into circuit designs. Overall, the STB6N80K5 is valued for its balance of performance, efficiency, and durability in demanding power applications.

Equivalent

The STB6N80K5 is an N-channel MOSFET commonly used for power switching applications. Equivalent products include the IRFB9N65A from International Rectifier (now under Infineon), the IXFH10N80 from IXYS, and the FDPF7N60NZ from Fairchild Semiconductor (now part of ON Semiconductor). These alternatives offer similar voltage and current ratings, but it's important to compare specific parameters like Rds(on), gate charge, and package type to ensure compatibility with your application.

Features

The STB6N80K5 is an N-channel Power MOSFET from STMicroelectronics, optimized for high-voltage applications. Key features include:
1. Drain-Source Voltage (Vds): 800V, suitable for high-voltage applications.
2. Continuous Drain Current (Id): 6A, allowing for moderate current handling.
3. Rds(on): Low on-resistance of approximately 0.85 ohms, contributing to efficient power management and reduced losses.
4. Gate Charge (Qg): Low gate charge, which enhances switching efficiency and speed.
5. Package: D²PAK, offering good thermal performance and suitability for surface mounting.
6. Applications: Ideal for applications such as power supplies, motor control, and industrial applications.
7. Technology: Made with ST's advanced super-junction technology for better performance.
8. Temperature Range: Operates efficiently over a wide temperature range, from -55°C to +150°C.
9. Ruggedness: Good avalanche and dv/dt capabilities, ensuring reliability in demanding environments.
These features make the STB6N80K5 a robust choice for designs requiring efficient high-voltage switching.

Manufacturer

The STB6N80K5 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products. The company operates in various sectors, including automotive, industrial, personal electronics, and communications equipment, providing components like microcontrollers, sensors, power devices, and integrated circuits. Known for its innovation and cutting-edge technology, STMicroelectronics serves a variety of industries with solutions that enhance performance and efficiency.

Application

The STB6N80K5 is a power MOSFET commonly used in applications requiring efficient power management and high voltage handling. Key application areas include:
1. Switching Power Supplies: Used in converters and inverters for improved energy efficiency.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Lighting Systems: Employed in LED drivers and HID lighting systems for robust power regulation.
4. Telecommunications: Used in power management circuits within telecom infrastructure.
5. Renewable Energy: Integrated into solar inverters and wind power converters.
6. Consumer Electronics: Found in power adapters and chargers for various electronic devices.
These applications leverage the device's high voltage capability, efficiency, and reliability.

Package

The STB6N80K5 is a N-channel Power MOSFET, and its package type is DPAK. DPAK, also known as TO-252, is a surface-mount package designed for high-power applications.

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