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STB6NK60ZT4
+Lista de MateriaisMOSFET N-CH 600V 6A D2PAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STB6NK60ZT4
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Ficha Técnica STB6NK60ZT4 DataSheet
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Especificações
| Atributo | Valor |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.2Ohm @ 3A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 46 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 905 pF @ 25 V |
| PowerDissipation(Max) | 110W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK |
Visão Geral
Description
The STB6NK60ZT4 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for use in power management applications, including switching power supplies, motor control, and other high-efficiency systems. The key features of the STB6NK60ZT4 include:
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 600V and a continuous drain current of approximately 5.8A, making it suitable for high-voltage applications.
2. Low On-Resistance: It has a low on-state resistance (R_DS(on)), which helps minimize power loss and improve efficiency in power conversion systems.
3. Fast Switching: The device is capable of fast switching, which is beneficial for applications that require high-speed operation.
4. Package Type: It typically comes in a DPAK package, which provides a compact form factor suitable for surface-mount applications.
5. Applications: It is commonly used in industrial and consumer electronics for energy-efficient power management and conversion.
Overall, the STB6NK60ZT4 is valued for its efficiency, reliability, and robustness in demanding electrical environments.
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 600V and a continuous drain current of approximately 5.8A, making it suitable for high-voltage applications.
2. Low On-Resistance: It has a low on-state resistance (R_DS(on)), which helps minimize power loss and improve efficiency in power conversion systems.
3. Fast Switching: The device is capable of fast switching, which is beneficial for applications that require high-speed operation.
4. Package Type: It typically comes in a DPAK package, which provides a compact form factor suitable for surface-mount applications.
5. Applications: It is commonly used in industrial and consumer electronics for energy-efficient power management and conversion.
Overall, the STB6NK60ZT4 is valued for its efficiency, reliability, and robustness in demanding electrical environments.
Equivalent
The STB6NK60ZT4 is an N-channel MOSFET. Its equivalent products include:
1. IRF640: A commonly used N-channel MOSFET with similar voltage and current ratings.
2. FDPF8N60NZ: Another N-channel MOSFET with comparable specifications.
3. IXFH6N60: Similar N-channel MOSFET suitable for switching applications.
4. NTP8N60: Offers comparable voltage and current handling.
Ensure to verify specific electrical characteristics and package compatibility when seeking replacements.
1. IRF640: A commonly used N-channel MOSFET with similar voltage and current ratings.
2. FDPF8N60NZ: Another N-channel MOSFET with comparable specifications.
3. IXFH6N60: Similar N-channel MOSFET suitable for switching applications.
4. NTP8N60: Offers comparable voltage and current handling.
Ensure to verify specific electrical characteristics and package compatibility when seeking replacements.
Features
The STB6NK60ZT4 is a power MOSFET from STMicroelectronics, designed for use in high-efficiency switching applications. Key features include:
1. N-channel MOSFET: It is an N-channel enhancement mode transistor, which is ideal for high-speed switching.
2. VDSS Rating: The device can handle a drain-source voltage (VDSS) of up to 600V, making it suitable for applications involving high voltage.
3. Continuous Drain Current: It supports a continuous drain current (ID) of up to 5.6A (at 25°C).
4. Low On-State Resistance: The MOSFET features low on-resistance (RDS(on)), which reduces power loss and enhances efficiency.
5. Fast Switching: Designed for fast switching, it helps improve overall performance in switching applications.
6. TO-220 Package: The transistor is available in a TO-220 package, which provides good thermal conductivity and ease of mounting.
These features make the STB6NK60ZT4 suitable for use in applications such as power supplies, motor control, and lighting.
1. N-channel MOSFET: It is an N-channel enhancement mode transistor, which is ideal for high-speed switching.
2. VDSS Rating: The device can handle a drain-source voltage (VDSS) of up to 600V, making it suitable for applications involving high voltage.
3. Continuous Drain Current: It supports a continuous drain current (ID) of up to 5.6A (at 25°C).
4. Low On-State Resistance: The MOSFET features low on-resistance (RDS(on)), which reduces power loss and enhances efficiency.
5. Fast Switching: Designed for fast switching, it helps improve overall performance in switching applications.
6. TO-220 Package: The transistor is available in a TO-220 package, which provides good thermal conductivity and ease of mounting.
These features make the STB6NK60ZT4 suitable for use in applications such as power supplies, motor control, and lighting.
Pinout
The STB6NK60ZT4 is an N-channel MOSFET produced by STMicroelectronics. It typically comes in a standard DPAK (TO-252) package. This component features three pins: gate (G), drain (D), and source (S).
1. Gate (G): The pin used to control the MOSFET's operation. By varying the voltage at this pin, the flow of current between the drain and source can be regulated.
2. Drain (D): This is the pin through which the main current flows. It connects to the load in a circuit.
3. Source (S): The pin that completes the circuit for the main current to flow. It is typically connected to the ground or the negative side of the power supply in a circuit.
The STB6NK60ZT4 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 6A. It is commonly used in power management, motor control, and as a switch in various electronic devices.
1. Gate (G): The pin used to control the MOSFET's operation. By varying the voltage at this pin, the flow of current between the drain and source can be regulated.
2. Drain (D): This is the pin through which the main current flows. It connects to the load in a circuit.
3. Source (S): The pin that completes the circuit for the main current to flow. It is typically connected to the ground or the negative side of the power supply in a circuit.
The STB6NK60ZT4 is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of up to 6A. It is commonly used in power management, motor control, and as a switch in various electronic devices.
Manufacturer
The STB6NK60ZT4 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products, including microcontrollers, sensors, power management components, and discrete devices. It is known for its innovations in electronics and plays a significant role in various industries such as automotive, industrial, personal electronics, and communications equipment. The company is headquartered in Geneva, Switzerland, and is recognized for its extensive portfolio of semiconductor solutions that contribute to advancements in technology and efficiency across multiple sectors.
Application
The STB6NK60ZT4 is an N-channel MOSFET commonly used in various applications due to its high voltage capability and efficiency. Key application areas include:
1. Power Supply Circuits: Used for switching and regulating power in AC-DC and DC-DC converters.
2. Motor Control: Ideal for driving motors in applications like industrial automation and consumer electronics.
3. Lighting Systems: Utilized in LED drivers and lighting control circuits.
4. Battery Management: Employed in battery protection and charging circuits for efficient power management.
5. Inverters: Suitable for use in inverters for renewable energy systems such as solar panels.
These applications leverage its fast switching speed, low on-resistance, and high energy efficiency.
1. Power Supply Circuits: Used for switching and regulating power in AC-DC and DC-DC converters.
2. Motor Control: Ideal for driving motors in applications like industrial automation and consumer electronics.
3. Lighting Systems: Utilized in LED drivers and lighting control circuits.
4. Battery Management: Employed in battery protection and charging circuits for efficient power management.
5. Inverters: Suitable for use in inverters for renewable energy systems such as solar panels.
These applications leverage its fast switching speed, low on-resistance, and high energy efficiency.
Package
The STB6NK60ZT4 is a N-channel MOSFET and comes in a DPAK (TO-252) package type. This surface-mounted package is designed for efficient thermal performance and is commonly used in power applications.
