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STD10N60M2
+Lista de MateriaisMOSFET N-CH 600V 7.5A DPAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STD10N60M2
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Ficha Técnica STD10N60M2 DataSheet
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Pacote TO-252-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II Plus |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 600mOhm @ 3A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 400 pF @ 100 V |
| PowerDissipation(Max) | 85W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Visão Geral
Description
Key features include a low gate charge, which minimizes power losses and allows for efficient operation at higher frequencies. Its robust design supports high avalanche energy ratings, making it reliable in demanding environments. The STD10N60M2 is housed in a standard TO-220 package, allowing for easy integration into various circuit boards.
Overall, the STD10N60M2 is favored for its energy efficiency, reliability, and capability to handle high-voltage and high-current applications, making it a versatile choice for designers focusing on power management solutions.
Equivalent
Features
1. N-channel MOSFET: This device is an N-channel MOSFET, which is suitable for high-speed switching.
2. Voltage and Current Ratings: It typically supports a drain-source voltage (V_ds) of 600V and a continuous drain current (I_d) of about 10A.
3. Low On-Resistance: The MOSFET offers low on-state resistance, which reduces power loss and increases efficiency during operation.
4. Second Generation MDmesh Technology: Utilizes advanced technology to enhance performance, particularly in terms of fast switching speeds and reduced power losses.
5. TO-252 Package: Comes in a TO-252 (DPAK) package, which is compact and suitable for surface-mount applications.
6. Enhanced Robustness: Designed for better ruggedness and reliability under high voltage and current conditions.
7. Applications: Commonly used in power supply units, converters, and other high-efficiency switching applications.
These features make the STD10N60M2 suitable for high-voltage and high-efficiency power switching applications.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET. By applying a voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): The drain is where the current flows out of the MOSFET when it is in the on state. It is connected to the load in most applications.
3. Source (S): The source is where the current enters the MOSFET. It is typically connected to the ground or negative voltage supply in most circuits.
4. Tab (Drain): The metal tab is also electrically connected to the drain and provides a path for heat dissipation.
The STD10N60M2 is used in various applications, including power supplies and motor control, where efficient switching and power management is required.
Manufacturer
Application
1. Switching Power Supplies: Efficient for converting electrical power to the desired voltage or current level.
2. Motor Control: Ideal for controlling speed and torque in DC motors and other motor-driven systems.
3. LED Drivers: Used in circuits that power LED lighting systems.
4. Inverters: Suitable for converting DC to AC power in various electronic devices.
5. Power Factor Correction (PFC): Helps enhance energy efficiency in electrical systems.
6. Converters and Adapters: Utilized in AC-DC converters for various electronic devices.
These applications benefit from the MOSFET's high efficiency, fast switching, and robustness.