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STD13NM60N
+Lista de MateriaisMOSFET N-CH 600V 11A DPAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STD13NM60N
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Ficha Técnica STD13NM60N DataSheet
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 360mOhm @ 5.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 790 pF @ 50 V |
| PowerDissipation(Max) | 90W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Visão Geral
Description
STD13NM60N is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by STMicroelectronics. It is designed for high-efficiency power conversion applications. Key features include:
1. Voltage and Current Ratings: Typically, it supports a maximum drain-source voltage of 600V and a drain current capability suitable for its applications.
2. Technology: The STD13NM60N utilizes advanced N-channel MDmesh™ technology, enhancing its efficiency and thermal performance.
3. Applications: It's commonly used in power supplies, converters, and other high-voltage switching applications due to its fast switching capabilities and robustness.
4. Package: Often available in a DPAK (TO-252) package, which provides good thermal dissipation properties and is suitable for surface-mount technology.
5. Performance: The MOSFET is known for low on-resistance, minimizing power loss and heat generation, which improves the overall efficiency of electronic circuits.
In summary, the STD13NM60N is a high-performance, reliable component for designers looking for efficient power management solutions in high-voltage applications.
1. Voltage and Current Ratings: Typically, it supports a maximum drain-source voltage of 600V and a drain current capability suitable for its applications.
2. Technology: The STD13NM60N utilizes advanced N-channel MDmesh™ technology, enhancing its efficiency and thermal performance.
3. Applications: It's commonly used in power supplies, converters, and other high-voltage switching applications due to its fast switching capabilities and robustness.
4. Package: Often available in a DPAK (TO-252) package, which provides good thermal dissipation properties and is suitable for surface-mount technology.
5. Performance: The MOSFET is known for low on-resistance, minimizing power loss and heat generation, which improves the overall efficiency of electronic circuits.
In summary, the STD13NM60N is a high-performance, reliable component for designers looking for efficient power management solutions in high-voltage applications.
Equivalent
The STD13NM60N is an N-channel MOSFET with characteristics suitable for high-efficiency switching applications. Equivalent or similar products include:
1. IRF640N - from Infineon Technologies
2. STP16NF06 - from STMicroelectronics
3. FQP13N60C - from ON Semiconductor
4. SFP13N60C - from Fairchild Semiconductor
These components may have varying specs, so always check datasheets for detailed comparisons.
1. IRF640N - from Infineon Technologies
2. STP16NF06 - from STMicroelectronics
3. FQP13N60C - from ON Semiconductor
4. SFP13N60C - from Fairchild Semiconductor
These components may have varying specs, so always check datasheets for detailed comparisons.
Features
The STD13NM60N is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits. Here are some key features:
1. Voltage and Current Ratings:
- Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 11A (at 25°C)
2. R_DS(on):
- On-state Resistance: 0.39 ohms (typical) when V_GS = 10V
3. Gate Threshold Voltage:
- Typically around 3-4V
4. Package:
- Available in a DPAK package, which is suitable for surface mounting.
5. Performance:
- Designed for high-speed switching applications.
6. Applications:
- Suitable for use in power supplies, motor control, and general-purpose switching.
7. Thermal Characteristics:
- Capable of operating at high temperatures with proper heat dissipation.
These features make the STD13NM60N a versatile component for various applications requiring efficient power management and switching capabilities.
1. Voltage and Current Ratings:
- Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 11A (at 25°C)
2. R_DS(on):
- On-state Resistance: 0.39 ohms (typical) when V_GS = 10V
3. Gate Threshold Voltage:
- Typically around 3-4V
4. Package:
- Available in a DPAK package, which is suitable for surface mounting.
5. Performance:
- Designed for high-speed switching applications.
6. Applications:
- Suitable for use in power supplies, motor control, and general-purpose switching.
7. Thermal Characteristics:
- Capable of operating at high temperatures with proper heat dissipation.
These features make the STD13NM60N a versatile component for various applications requiring efficient power management and switching capabilities.
Pinout
The STD13NM60N is a N-channel MOSFET from STMicroelectronics. It is commonly used in power switching applications. This MOSFET comes in a DPAK (TO-252) package, which typically has 3 pins.
1. Pin 1 (Gate): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Pin 2 (Drain): The drain is the terminal through which the main current enters the MOSFET when it is switched on.
3. Pin 3 (Source): This is the terminal through which the current exits the MOSFET.
Additionally, the metal tab on the package is often connected to the drain, providing a path for heat dissipation. The STD13NM60N is known for its high voltage capability (600V) and decent current handling, making it suitable for various power applications.
1. Pin 1 (Gate): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Pin 2 (Drain): The drain is the terminal through which the main current enters the MOSFET when it is switched on.
3. Pin 3 (Source): This is the terminal through which the current exits the MOSFET.
Additionally, the metal tab on the package is often connected to the drain, providing a path for heat dissipation. The STD13NM60N is known for its high voltage capability (600V) and decent current handling, making it suitable for various power applications.
Manufacturer
The STD13NM60N is manufactured by STMicroelectronics. STMicroelectronics is a multinational electronics and semiconductor manufacturer headquartered in Geneva, Switzerland. The company is a leading player in the semiconductor industry, providing a wide range of products including microcontrollers, sensors, power management chips, and analog devices, among others. STMicroelectronics serves various markets such as automotive, industrial, personal electronics, and communications equipment. The company is known for its innovation and development of integrated solutions that enhance the performance, efficiency, and reliability of electronic devices.
Application
The STD13NM60N is a N-channel MOSFET used in various applications due to its high voltage capability and low on-resistance. Key application areas include:
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Suitable for controlling motors in industrial and consumer electronics.
3. LED Drivers: Used in LED lighting systems for efficient power regulation.
4. Inverters and Converters: Utilized in DC-AC inverters and DC-DC converters.
5. Telecommunications: Applied in telecom equipment for voltage regulation and signal amplification.
6. Automotive Systems: Used in electronic control units (ECUs) for various vehicular functions.
Its robust performance and efficiency make it versatile for many electronic applications.
1. Power Supply Units: Used in switch-mode power supplies (SMPS) for efficient power conversion.
2. Motor Drives: Suitable for controlling motors in industrial and consumer electronics.
3. LED Drivers: Used in LED lighting systems for efficient power regulation.
4. Inverters and Converters: Utilized in DC-AC inverters and DC-DC converters.
5. Telecommunications: Applied in telecom equipment for voltage regulation and signal amplification.
6. Automotive Systems: Used in electronic control units (ECUs) for various vehicular functions.
Its robust performance and efficiency make it versatile for many electronic applications.
Package
STD13NM60N is typically a part number for an electronic component, such as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The package type for this component is usually DPAK (Decawat Package), a surface-mounted package ideal for power devices offering good thermal performance and suited for automated assembly.
