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STD3PK50Z
+Lista de MateriaisMOSFET P-CH 500V 2.8A DPAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STD3PK50Z
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Ficha Técnica STD3PK50Z DataSheet
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 2.8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4Ohm @ 1.4A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 620 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Visão Geral
Equivalent
- STP3NK50Z (STMicroelectronics)
- IRFBC40 (Infineon)
- FQP3N50 (Fairchild/ON Semiconductor)
- 2SK3562 (Toshiba)
These are N-channel MOSFETs with similar specs (~500V, ~3A). Verify parameters like gate charge and RDS(on) for exact compatibility.
Features
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.5A (Continuous Drain Current)
- Low On-Resistance: 50mΩ (max) @ VGS = -10V
- Fast Switching: Suitable for high-efficiency applications
- Compact Package: TO-252 (DPAK) for space-saving designs
- Low Gate Drive: Enhanced performance with -10V gate drive
- Applications: Power management, load switching, DC-DC converters
It offers reliable performance in a cost-effective package.