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STD4NK80ZT4
+Lista de MateriaisMOSFET N-CH 800V 3A DPAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STD4NK80ZT4
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 3.5Ohm @ 1.5A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 22.5 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 575 pF @ 25 V |
| PowerDissipation(Max) | 80W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Visão Geral
Description
If STD4NK80ZT4 is a product, service, project, or concept, understanding it would require details such as its purpose, functionality, applications, or the problems it addresses. For instance, it could be:
1. A Product Code: Used by a company to identify a specific item or model in their inventory.
2. A Project Name or Code: Internally used within an organization to refer to a specific initiative.
3. A Technical Identifier: In software, hardware, or a proprietary system, it might represent a version, protocol, or framework.
For detailed information, one would typically refer to documentation, a company’s official communications, or industry sources relevant to the context in which the code is used.
Equivalent
1. IRF840 by Infineon Technologies
2. FQP8N80C by ON Semiconductor
3. NTE2388 by NTE Electronics
When selecting an equivalent, ensure the key parameters like voltage rating, current capacity, and package type match your requirements. Always consult datasheets to verify compatibility.
Features
1. N-Channel MOSFET: Designed for switching and amplification applications.
2. VDSS (Drain-Source Voltage): Typically around 800V, indicating high voltage capability.
3. RDS(on) (On-Resistance): Generally low, ensuring efficient conductivity and minimal power losses.
4. ID (Drain Current): Capable of handling significant current, often around tens of amperes depending on the package and thermal conditions.
5. Technology: Uses advanced MOSFET technology for fast switching and high efficiency.
6. Applications: Ideal for use in power supplies, converters, and motor control circuits.
These features make the STD4NK80ZT4 suitable for high-power and high-efficiency applications, providing reliable performance in demanding electronic circuits. Always refer to the manufacturer's datasheet for precise specifications and ratings.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET switches between its on or off states.
2. Drain (D): The drain is the terminal through which the main current flows into the MOSFET when it is in the on state.
3. Source (S): The source is the terminal through which the main current flows out of the MOSFET.
Additionally, the DPAK package has a tab that is typically connected to the drain. The STD4NK80ZT4 is designed for applications like switching power supplies and motor control. It features a maximum drain-source voltage (V_DS) of 800V and a continuous drain current (I_D) of 3.5A.