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STD5N20T4
+Lista de MateriaisMOSFET N-CH 200V 5A DPAK
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FabricanteSTMicroeletrônica
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Peça do Fabricante #STD5N20T4
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Ficha Técnica STD5N20T4 DataSheet
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Pacote TO-252-3
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Especificações
| Atributo | Valor |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MESH OVERLAY™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 800mOhm @ 2.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 27 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 350 pF @ 25 V |
| PowerDissipation(Max) | 45W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Visão Geral
Description
Key specifications of the STD5N20T4 include a drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 5A. The device is housed in a DPAK (TO-252) package, which provides good thermal performance and is suitable for surface mounting. The SuperMESH™ technology enhances the device’s performance by reducing power loss, making it more efficient.
The STD5N20T4 is noted for its robustness, with features like avalanche ruggedness and an improved dv/dt capability, ensuring reliability in demanding conditions. Its efficient design makes it suitable for applications requiring high power density and energy efficiency.
Equivalent
1. IRF520
2. FQP2N60C
3. STP20NF06
Ensure compatibility by checking the voltage, current, Rds(on), and package specifications before substituting. For precise applications, consulting the datasheet or manufacturer may be necessary to confirm equivalency.
Features
1. N-Channel MOSFET: It is designed for use in a variety of applications requiring switching and amplification.
2. Voltage and Current Ratings: Typically, this component can handle a drain-source voltage (V_ds) of 200V and a continuous drain current (I_d) of around 5A, though exact figures can vary based on the specific part variant.
3. RDS(on): It has a low on-state resistance, which helps in efficient power management by reducing power loss during operation.
4. Package: It is often available in a DPAK package. This package type is suitable for surface mounting, providing ease of integration in PCB designs.
5. Applications: Commonly used in power management applications, such as DC-DC converters and motor control circuits.
These features make the STD5N20T4 suitable for a wide range of high-efficiency power management applications. Always refer to the specific datasheet for precise electrical characteristics and ratings.
Pinout
1. Gate (G): This pin is responsible for controlling the flow of current between the drain and source. Applying a voltage to the gate enables the MOSFET to switch on and conduct.
2. Drain (D): The drain is where the current flows out of the MOSFET when the device is in the "on" state. It is connected to the load in most circuit configurations.
3. Source (S): The source is the terminal through which the current enters the MOSFET. It is typically connected to the ground or a negative voltage supply in circuit applications.
This MOSFET is used for medium-power switching applications, capable of handling a drain-source voltage (V_DS) of 200V and a drain current (I_D) of up to 5A.
Manufacturer
Application
1. Power Management: Ideal for DC-DC converters and voltage regulation.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Lighting: Used in LED drivers and for controlling lighting systems.
4. Switching Power Supplies: Efficient for high-frequency operations in power supply units.
5. Audio Amplifiers: Utilized for switching in audio amplification systems.
These capabilities make it popular in automotive, industrial, and consumer electronics sectors.